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RSA6.1J4

Rohm
Part Number RSA6.1J4
Manufacturer Rohm
Description ESD Protection diode
Published May 17, 2005
Detailed Description Diodes ESD Protection diode RSA 6.1J4 RSA6.1J4 1.2±0.1 1.6±0.1 0.45 1.55 zApplication ESD protection zFeatures 1) Ult...
Datasheet PDF File RSA6.1J4 PDF File

RSA6.1J4
RSA6.1J4

Overview
Diodes ESD Protection diode RSA 6.
1J4 RSA6.
1J4 1.
2±0.
1 1.
6±0.
1 0.
45 1.
55 zApplication ESD protection zFeatures 1) Ultra small mold type.
(EMD5) 2) High reliability.
zConstruction Silicon epitaxial planar zDimensions (Unit : mm) zLand size figure (Unit : mm) 1.
6±0.
1 0.
22±0.
05 (5) (4) 0.
13±0.
05 0.
4 0.
25 0.
15 0.
30.
15 0.
25 (1) (2) 0.
5 0.
5 1.
0±0.
1 (3) 0～0.
1 0.
5±0.
05 ROHM : EMD5 JEITA : SC-75A Size dot (year week factory) zTaping specifications (Unit : mm) 0.
5 0.
5 EMD5 zStructure 4.
0±0.
1 2.
0±0.
05 φ1.
5 +0.
1 −0 0.
3±0.
1 1.
75±0.
1 1.
65±0.
01 8.
0±0.
2 3.
5±0.
05 1.
65±0.
1 5.
5±0.
2 0~0.
1 1PIN 1.
7±0.
05 4.
0±0.
1 φ0.
8±0.
1 0.
65±0.
1 zAbsolute maximum ratings (Ta=25°C) Param eter Sym bol Peak puls e power-1 (tp=10×1000us ) Peak puls e power-2 (tp=8×20us ) Junction tem perature Ppk Ppk Tj Storage tem perature Ts tg Lim its 10 80 150 -55 to +150 Unit W W ℃ ℃ zElectrical characteristics (Ta=25°C) Param eter Sym bol Min.
Typ.
Max.
Zener voltage Revers e current Forward voltage Capacitance between term inals VZ 6.
1 - 7.
20 IR - - 1.
0 VF - - 1.
0 Ct - 35 - Unit Conditions V IZ=1m A µA VR=3.
0V V IF=100m A pF f=1MHz,VR=0V Rev.
C 1/2 ZENER VOLTAGE:Vz(Ｖ) Diodes zElectrical characteristic curves (Ta=25°C) RSA6.
1J4 ZENER CURRENT:Iz(mA) 10 1 Ta=25℃ 0.
1 Ta=-25℃ Ta=75℃ Ta=125℃ Ta=150℃ 0.
01 0.
001 6 6.
5 7 7.
5 ZENER VOLTAGE:Vz(V) Vz-Iz CHARACTERISTICS REVERSE CURRENT:IR (nA) 1000 100 10 1 0.
1 0.
01 0.
001 0.
0001 0.
00001 80 Ta=150℃ Ta=125℃ Ta=75℃ Ta=25℃ Ta=-25℃ 0.
5 1 1.
5 2 2.
5 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 3 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1000 100 10 1 0 f=1MHz 0.
5 1 1.
5 2 2.
5 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 3 6.
9 0.
2 REVERSE CURRENT:IR(nA) Ta=25℃ 0.
18 6.
8 IZ=1mA n=30pcs 0.
16 0.
14 6.
7 0.
12 0.
1 6.
6 0.
08 0.
06 6.
5 0.
04 AVE:6.
684V 0.
02 6.
4 0 Vz DISRESION MAP Ta=25℃ VR=3V n=30pcs AVE:0.
0190nA IR DISRESION MAP CAPACITANCE BETWEENTERMINALS:Ct(pF) 45 44 43 42 41 40 39 38 37 36 35 Ta=25℃ f=1MHz VR=0V n=10pcs A...


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