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S8202

Part Number	S8202
Manufacturer	Polyfet RF Devices
Description	SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Published	May 17, 2005
Detailed Description	polyfet rf devices S8202 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF ...
Datasheet	S8202 PDF File

Overview

polyfet rf devices S8202 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.
Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency.
TM SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 8.
0 Watts Single Ended Package Style SO8 HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 30 Watts Junction to Case Thermal Resistance o 7.
00 C/W Maximum Junction Temperature o 2...

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