DatasheetsPDF.com

SDM8401

ETC
Part Number SDM8401
Manufacturer ETC
Description Dual Enhancement Mode Field Effect Transistor ( N and P Channel)
Published May 18, 2005
Detailed Description S DM8401 J UNE 21, 2005 ver1.3 Dual E nhancement Mode Field E ffect Transistor ( N and P Channel) P R ODUC T S UMMAR Y ...
Datasheet PDF File SDM8401 PDF File

SDM8401
SDM8401

Overview
S DM8401 J UNE 21, 2005 ver1.
3 Dual E nhancement Mode Field E ffect Transistor ( N and P Channel) P R ODUC T S UMMAR Y (N-C hannel) VDS S ID R DS (ON) ( m W ) Max 30V 7.
6A 20 @ VGS = 10V 40 @ VGS = 4.
5V P R ODUC T S UMMAR Y (P -C hannel) VDS S -30V ID -5.
3A R DS (ON) ( m W ) Max 45 @ VGS = -10V 60 @ VGS = -4.
5V D1 D1 D2 D2 87 65 S O-8 1 1234 S1 G1 S2 G2 ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted) P arameter S ymbol N-C hannel P-C hannel Unit Drain-S ource Voltage VDS 30 -30 V Gate-S ource Voltage VGS 20 20 V Drain C urrent-C ontinuous a @ TJ=25 C -P ulsed b ID 7.
6 -5.
3 IDM 30 -20 A A Drain-S ource Diode Forward C urrent a IS 1.
7 -1.
7 A Maximum P ower Dissipation a PD 2.
0 W Operating Junction and S torage Temperature R ange TJ, TSTG -55 to 150 C THE R MAL CHAR ACTE R IS TICS Thermal R esistance, Junction-to-Ambient a R JA 62.
5 C/W 1 S DM8401 N-Channel ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) P a ra meter S ymbol Condition Min Typ C Max Unit 5 OFF CHARACTERISTICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS b Gate Threshold Voltage BVDSS VGS =0V, ID =250uA 30 IDSS VDS =24V, VGS =0V IGSS VGS = 20V, VDS =0V V 1 uA 100 nA VGS(th) VDS =VGS, ID = 250uA 1 1.
7 3 V Drain-S ource On-S tate R esistance R DS(ON) VGS =10V, ID =7A VGS =4.
5V, ID=6A 14 20 m ohm 24 40 m ohm On-S tate Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS c ID(ON) gFS VDS = 10V, VGS = 10V VDS = 10V, ID =7A 20 10 A S Input Capacitance Output Capacitance R everse Transfer Capacitance SWITCHING CHARACTERISTICS c C IS S COSS CRSS VDS =15V, VGS = 0V f =1.
0MHZ 1014 PF 213 PF 151 PF Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time tD(ON) VDD = 15V, tr ID = 1A, VGS = 10V, tD(O F F ) RGEN = 6 tf 8.
3 ns 27.
5 ns 20.
8 ns 8.
3 ns Total Gate Charge Qg VDS =15V, ID =7A,VGS =10V VDS =15V, ID =7A,VGS =4.
5V 20.
1 10.
5 nC nC Gate-S ource ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)