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SE701

Polyfet RF Devices
Part Number SE701
Manufacturer Polyfet RF Devices
Description SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Published May 18, 2005
Detailed Description polyfet rf devices SE701 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF ...
Datasheet PDF File SE701 PDF File

SE701
SE701

Overview
polyfet rf devices SE701 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.
Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency.
TM SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 45.
0 Watts Push - Pull Package Style AE HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 110 Watts Junction to Case Thermal Resistance o 1.
40 C/W Maximum Junction Temperature o 2...


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