DatasheetsPDF.com

SEMD6

Infineon Technologies AG
Part Number SEMD6
Manufacturer Infineon Technologies AG
Description NPN/PNP Silicon Digital Transistor Array Preliminary data
Published May 18, 2005
Detailed Description SEMD6 NPN/PNP Silicon Digital Transistor Array Preliminary data • Switching circuit, inverter, interface circuit, driver...
Datasheet PDF File SEMD6 PDF File

SEMD6
SEMD6

Overview
SEMD6 NPN/PNP Silicon Digital Transistor Array Preliminary data • Switching circuit, inverter, interface circuit, driver circuit • Two (galvanic) internal isolated NPN/PNP Transistors in one package • Built in bias resistor (R1=4.
7kΩ) Tape loading orientation C1 B2 5 E2 4 4 5 3 6 1 2 Top View 3 2 1 Marking on SOT666 package (for example W R) corresponds to pin 1 of device Position in tape: pin 1 same of feed hole side 6 R1 TR1 R1 TR2 4 5 6 Direction of Unreeling Type SEMD6 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 75 °C Junction temperature Storage temperature Thermal Resistance Junction - soldering point 1) 1For calculation of R thJA please refer to Application Note Thermal Resistance WR 1 E1 2 B1 3 C2 EHA07290 Marking W2 Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666 Symbol VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg Value 50 50 10 15 100 250 150 -65 .
.
.
150 Unit V mA mW °C RthJS ≤ 300 K/W 1 Feb-26-2004 SEMD6 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values min.
DC Characteristics Collector-emitter breakdown voltage IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 40 V, IE = 0 DC current gain 1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.
5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on Voltage IC = 2 mA, VCE = 0.
3 V Input resistor AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb 3 fT 150 R1 3.
2 4.
7 6.
2 Vi(on) 0.
5 1.
1 Vi(off) 0.
4 0.
8 VCEsat 0.
3 hFE 120 630 ICBO 100 V(BR)EBO 10 V(BR)CBO 50 V(BR)CEO 50 typ.
max.
Unit V nA V kΩ MHz pF 1) Pulse test: t < 300µs; D < 2% 2 Feb-26-2004 SEMD6 NPN Type DC Current Gain hFE = f (I C) VCE = 5V (common...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)