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SF5J48

Toshiba Semiconductor
Part Number SF5J48
Manufacturer Toshiba Semiconductor
Description TOSHIBA THYRISTOR SILICON PLANAR TYPE
Published May 20, 2005
Detailed Description SF5G48,SF5J48,USF5G48,USF5J48 TOSHIBA THYRISTOR SILICON PLANAR TYPE SF5G48,SF5J48,USF5G48,USF5J48 MEDIUM POWER CONTROL ...
Datasheet PDF File SF5J48 PDF File

SF5J48
SF5J48

Overview
SF5G48,SF5J48,USF5G48,USF5J48 TOSHIBA THYRISTOR SILICON PLANAR TYPE SF5G48,SF5J48,USF5G48,USF5J48 MEDIUM POWER CONTROL APPLICATIONS l Repetitive Peak Off−State Voltage : VDRM = 400, 600V Repetitive Peak Reverse Voltage : VRRM = 400, 600V l Average On−State Current l Gate Trigger Current SF5G48·SF5J48 : IT (AV) = 5A : IGT = 10mA Max.
Unit: mm USF5G48·USF5J48 JEDEC JEITA TOSHIBA ― ― 13−10J1B JEDEC JEITA TOSHIBA ― ― 13−10J2B Weight: 1.
7g MARKING *1 MARK F5G48 F5J48 TYPE NAME SF5G48, USF5G48 SF5J48, USF5J48 *2 1 2001-07-13 SF5G48,SF5J48,USF5G48,USF5J48 MAXIMUM RATINGS CHARACTERISTIC SF5G48 Repetitive Peak Off−State Voltage and Repetitive Peak Reverse Voltage USF5G48 SF5J48 USF5J48 SF5G48 Non−Repetitive Peak USF5G48 Reverse Voltage (Non−Repetitive < 5ms SF5J48 Tj = 0~125°C) USF5J48 Average On−State Current R.
M.
S On−State Current Peak One Cycle Surge On−State Current (Non−Repetitive) I t Limit Value Critical Rate of Rise of On−State Current Peak Gate Power Dissipation Average Gate Power Dissition Peak Forward Gate Voltage Peak Reverse Gate Voltage Peak Forward Gate Current Junction Temperature Strage Temperature Range (Note 1) 2 SYMBOL RATING 400 UNIT VDRM VRRM 600 V 500 VRSM 720 IT (AV) IT (RMS) ITSM I t di /dt PGM PG (AV) VFGM VRGM IGM Tj Tstg 2 V 5 7.
8 80 (50Hz) 88 (60Hz) 32 100 5 0.
5 10 −5 2 −40~125 −40~125 A A A A s A / µs W W V V A °C °C 2 Note 1: VDRM = 0.
5 × Rated ITM ≤ 15A tgw ≥ 10µs tgr ≤ 250ns igp = IGT × 2.
0 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Off−State Current and Repetitive Peak Reverse Peak On−State Voltage Gate Trigger Voltage Gate Trigger Current Gate Non−Trigger Voltage Critical Rate of Rise of Off−State Voltage Holding Current Latching Current Thermal Resistance SYMBOL IDRM IRRM VTM VGT IGT VGD dv / dt IH IL Rth (j−c) TEST CONDITION VDRM = VRRM = Rated ITM = 15A VD = 6V, RL = 10Ω VD = Rated × 2 / 3, Tc = 125°C VDRM = Rated, Tc = 125°C Exponential Rise VD = 6V, ITM = 1A VD = 6V, f = 50Hz tgw = 50µs...


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