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SFF9240

Fairchild Semiconductor
Part Number SFF9240
Manufacturer Fairchild Semiconductor
Description Advanced Power MOSFET
Published May 20, 2005
Detailed Description www.DataSheet4U.com Advanced Power MOSFET FEATURES ! Avalanche Rugged Technology ! Rugged Gate Oxide Technology ! Lower...
Datasheet PDF File SFF9240 PDF File

SFF9240
SFF9240

Overview
www.
DataSheet4U.
com Advanced Power MOSFET FEATURES ! Avalanche Rugged Technology ! Rugged Gate Oxide Technology ! Lower Input Capacitance ! Improved Gate Charge ! Extended Safe Operating Area ! Lower Leakage Current : 10 µA (Max.
) @ VDS = -200V ! Lower RDS(ON) : 0.
344 Ω (Typ.
) SFF9240 BVDSS = -200 V RDS(on) = 0.
5 Ω ID = -7.
6 A TO-3PF 1 2 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp.
for Soldering Purposes, 1/8 ” from case for 5-seconds o o o Value -200 -7.
6 -5.
3 1 O Units V A A V mJ A mJ V/ns W W/ C o 30 + _ 30 770 -7.
6 6.
0 -5.
0 60 0.
48 - 55 to +150 O 1 O 1 O 3 O 2 o C 300 Thermal Resistance Symbol RθJC RθJA Characteristic Junction-to-Case Junction-to-Ambient Typ.
--Max.
2.
08 40 Units o C/W Rev.
A www.
DataSheet4U.
com SFF9240 Electrical Characteristics (TC=25oC unless otherwise specified) Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp.
Coeff.
Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(“ Miller”) Charge Min.
Typ.
Max.
Units -200 --2.
0 ------------------0.
16 ------5.
3 207 81 16 23 54 19 46 9.
2 22.
9 ---4.
0 -100 100 -10 -100 0.
5 -310 120 40 55 115 50 59 --nC ns µA Ω S pF V o P-CHANNEL POWER MOS...


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