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SFF9250L

Fairchild Semiconductor
Part Number SFF9250L
Manufacturer Fairchild Semiconductor
Description Advanced Power MOSFET
Published May 20, 2005
Detailed Description www.DataSheet4U.com Advanced Power MOSFET FEATURES ❑ Logic-Level Gate Drive ❑ Avalanche Rugged Technology ❑ Rugged Gate...
Datasheet PDF File SFF9250L PDF File

SFF9250L
SFF9250L

Overview
www.
DataSheet4U.
com Advanced Power MOSFET FEATURES ❑ Logic-Level Gate Drive ❑ Avalanche Rugged Technology ❑ Rugged Gate Oxide Technology ❑ Lower Input Capacitances ❑ Improved Gate Charge ❑ Extended Safe Operating Area ❑ Lower Leakage Current : 10uA (Max.
) @ VDS=-200V ❑ Lower RDS(ON) : 0.
175 Ω (Typ.
) SFF9250L BVDSS = -200 V RDS(on) = 0.
23 Ω ID = -12.
6 A TO-3PF 1 2 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 °C) Continuous Drain Current (TC=100 °C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 °C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp.
for Soldering Purposes, 1/8″ from case for 5-seconds ② ① ① ③ ① Value -200 -12.
6 -7.
9 -50.
4 ±20 990 -12.
6 20.
4 -5.
0 90 0.
72 - 55 to +150 Units V A A V mJ A mJ V/ns W W/ °C °C 300 Thermal Resistance Symbol RθJC RθJA Characteristic Junction-to-Case Junction-to-Ambient Typ.
--Max.
0.
61 40 °C /W Units Rev.
A www.
DataSheet4U.
com SFF9250L Electrical Characteristics (TC=25°C unless otherwise specified) Symbol BVDSS ΔBV/ΔTJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp.
Coeff.
Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(Miller) Charge ------------.
175 0.
23 13 -Min.
Typ.
Max.
Units -200 --1.
0 ------0.
17 --------2.
0 100 -100 10 100 μA Ω S pF V V nA P-CHANNEL POWER MOSFET Test Condition VGS=0V,ID=-250μA See Fig 7 VDS=-5...


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