DatasheetsPDF.com

SFS9640

Fairchild Semiconductor
Part Number SFS9640
Manufacturer Fairchild Semiconductor
Description Advanced Power MOSFET
Published May 20, 2005
Detailed Description Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved...
Datasheet PDF File SFS9640 PDF File

SFS9640
SFS9640

Overview
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.
) @ VDS = -200V Low RDS(ON) : 0.
344 Ω (Typ.
) 1 2 3 SFS9640 BVDSS = -200 V RDS(on) = 0.
5 Ω ID = -6.
2 A TO-220F 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp.
for Soldering Purposes, 1/8 ” from case for 5-seconds o o o Value -200 -6.
2 -4.
7 1 O Units V A A V mJ A mJ V/ns W W/ C o -25 + _ 30 256 -6.
2 4.
0 -5.
0 40 0.
32 - 55 to +150 O 1 O 1 O 3 O 2 o C 300 Thermal Resistance Symbol RθJC RθJA Characteristic Junction-to-Case Junction-to-Ambient Typ.
--Max.
3.
13 62.
5 Units o C/W Rev.
B ©1999 Fairchild Semiconductor Corporation SFS9640 Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp.
Coeff.
Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain( “ Miller ” ) Charge Min.
Typ.
Max.
Units -200 --2.
0 ------------------0.
16 ------5.
8 207 81 16 23 54 19 46 9.
2 22.
9 ---4.
0 -100 100 -10 -100 0.
5 -310 120 40 55 115 50 59 --nC ns µA Ω Ω pF V V nA P-CHANNEL POWER MOSFET Electrical Characteristics (TC=25oC unless otherwise specified) T...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)