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SPU04N60C2

Infineon
Part Number SPU04N60C2
Manufacturer Infineon
Description Cool MOS Power Transistor
Published May 21, 2005
Detailed Description Final data SPD04N60C2 SPU04N60C2 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultr...
Datasheet PDF File SPU04N60C2 PDF File

SPU04N60C2
SPU04N60C2

Overview
Final data SPD04N60C2 SPU04N60C2 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved noise immunity P-TO251 Product Summary VDS RDS(on) ID 600 0.
95 4.
5 P-TO252 V Ω A Type SPD04N60C2 SPU04N60C2 Package P-TO252 P-TO251 Ordering Code Q67040-S4307 Q67040-S4306 Marking 04N60C2 04N60C2 Maximum Ratings, at TC = 25°C, unless otherwise specified Parameter Continuous drain current TC = 25 °C TC = 100 °C Symbol ID Value 4.
5 2.
8 Unit A Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID =3.
6A, VDD =50V ID puls EAS EAR IAR dv/dt VGS Ptot Tj , Tstg 9 130 0.
4 4.
5 6 ±20 50 -55.
.
.
+150 A V/ns V W °C mJ Avalanche energy, repetitive tAR limited by Tjmax 1) ID =4.
5A, VDD =50V Avalanche current, repetitive tAR limited by Tjmax Reverse diode dv/dt IS =4.
5A, VDS < VDD , di/dt=100A/µs, Tjmax=150°C Gate source voltage Power dissipation, TC = 25°C Operating and storage temperature Page 1 2002-10-07 Final data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min.
footprint @ 6 cm2 cooling area 2) Linear derating factor Soldering temperature, 1.
6 mm (0.
063 in.
) from case for 10s Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Static Characteristics Drain-source breakdown voltage VGS =0V, ID =0.
25mA SPD04N60C2 SPU04N60C2 Symbol min.
RthJC RthJA RthJA Tsold - Values typ.
max.
2.
5 75 75 50 0.
4 260 Unit K/W W/K °C V(BR)DSS V(BR)DS VGS(th) IDSS 600 3.
5 700 4.
5 5.
5 V Drain-source avalanche breakdown voltage VGS =0V, ID =4.
5A Gate threshold voltage, VGS = VDS ID =200µA, Tj =25°C Zero gate voltage drain current VDS = 600 V, VGS = 0 V, Tj = 25 °C VDS = 600 V, VGS = 0 V, Tj = 150 °C µA 0.
5 0.
85 0.
95 1 50 100 0.
95 nA Ω Gate-source leakage current VGS =20V, VDS=0V IG...


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