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SDB20S30

Infineon Technologies
Part Number SDB20S30
Manufacturer Infineon Technologies
Description Silicon Carbide Schottky Diode
Published May 23, 2005
Detailed Description Preliminary data Silicon Carbide Schottky Diode  Revolutionary semiconductor SDP20S30 SDB20S30 material - Silicon Car...
Datasheet PDF File SDB20S30 PDF File

SDB20S30
SDB20S30

Overview
Preliminary data Silicon Carbide Schottky Diode  Revolutionary semiconductor SDP20S30 SDB20S30 material - Silicon Carbide  Switching behavior benchmark  No reverse recovery  No temperature influence on Product Summary VRRM Qc IF P-TO220-3.
SMD 300 23 2x10 P-TO220-3-1.
V nC A the switching behavior  No forward recovery Type SDP20S30 SDB20S30 Package P-TO220-3-1.
Ordering Code Q67040-S4419 Marking D20S30 S20S30 1 2 3 P-TO220-3.
SMD Q67040-S4374 Maximum Ratings,at Tj = 25 °C, unless otherwise specified (per leg) Parameter Continuous forward current, TC=100°C RMS forward current, f=50Hz TC=25°C, tp =10ms Symbol IF I FRMS Value 10 14 36 45 100 6.
5 300 300 65 -55.
.
.
+175 Unit A Surge non repetitive forward current, sine halfwave I FSM Repetitive peak forward current Tj=150°C, TC=100°C, D=0.
1 I FRM I FMAX i2dt Non repetitive peak forward current tp =10µs, TC=25°C i 2 t value, TC=25°C, tp =10ms Repetitive peak reverse voltage Surge peak reverse voltage Power dissipation,...


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