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2MBI100NE-120

Part Number	2MBI100NE-120
Manufacturer	Fuji
Description	IGBT MODULE ( N series )
Published	May 28, 2005
Detailed Description	IGBT MODULE ( N series ) n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FW...
Datasheet	2MBI100NE-120 PDF File

Overview

IGBT MODULE ( N series ) n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function (4~5 Times Rated Current) n Outline Drawing n Applications • High Power Switching • A.
C.
Motor Controls • D.
C.
Motor Controls • Uninterruptible Power Supply n Maximum Ratings and Characteristics • Absolute Maximum Ratings Items Collector-Emitter Voltage Gate -Emitter Voltage Collector Current Max.
Power Dissipation Operating Temperature Storage Temperature Isolation Voltage Screw Torque ( Tc=25°C) Symbols VCES VGES Continuous IC 1ms IC PULSE Continuous -IC 1ms -IC PULSE PC Tj Tstg A.
C.
1min.
Vis Mounting *1 Terminals *2 Ratings 1200 ± 20 100 200 100 200 780 +150 -40 ∼ +125 2500 3.
5 4.
5 Units V V A W °C °C V Nm n Equivalent Circuit Note: *1:Recommendable Value; 2.
5 ∼ 3.
5 Nm (M5) or (M6) *2:Recommendable Value; 3.
5 ∼ 4.
5 Nm (M6) • Electrical Characteristics Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Output capacitance Reverse Transfer capacitance Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time ( at Tj=25°C ) Symbols ICES IGES VGE(th) VCE(sat) Cies Coes Cres tON tr tOFF tf VF trr Test Conditions VGE=0V VCE=1200V VCE=0V VGE=± 20V VGE=20V IC=100mA VGE=15V IC=100A VGE=0V VCE=10V f=1MHz VCC=600V IC=100A VGE=± 15V RG=9.
1Ω IF=100A VGE=0V IF=100A Min.
Typ.
Max.
2.
0 30 7.
5 3.
3 Units mA µA V V pF 1.
2 0.
6 1.
5 0.
5 3.
0 350 4.
5 16000 5800 5160 0.
65 0.
25 0.
85 0.
35 µs V ns • Thermal Characteristics Items Thermal Resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions IGBT Diode With Thermal Compound Min.
Typ.
Max.
0.
16 0.
43 Units °C/W 0.
025 Collector current vs.
Collector-Emitter voltage T j=25°C 250 V GE =20V,15V,12V,10V 200 200 250 Collector current vs.
Collector-Emitter voltage T j=125°C V GE =20V,15V,12V,10V [A] C C...

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2MBI100NE-120 IGBT MODULE ( N series ) - Fuji

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