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2N1482


Part Number 2N1482
Manufacturer Central Corp
Title NPN SILICON TRANSISTOR
Description Central TM Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 www.centralsemi.com ...
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2N1480 : Central TM Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 www.centralsemi.com .

2N1480 : TECHNICAL DATA NPN SILICON MEDIUM POWER TRANSISTOR Qualified per MIL-PRF-19500/207 Devices 2N1479 2N1480 2N1481 2N1482 Qualified Level MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base-Current Total Power Dissipation @ TA = 250C Operating & Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC IB PT TJ, Tstg Symbol RθJC 2N1479 2N1481 40 60 12 1.5 1.0 1.0 2N1480 2N1482 55 100 Unit Vdc Vdc Vdc Adc Adc W 0 -65 to +200 Max. 35 C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Unit 0 C/W TO-5* *See Appendix A for Package Outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise no.

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2N1481 : Central TM Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 www.centralsemi.com .

2N1481 : TECHNICAL DATA NPN SILICON MEDIUM POWER TRANSISTOR Qualified per MIL-PRF-19500/207 Devices 2N1479 2N1480 2N1481 2N1482 Qualified Level MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base-Current Total Power Dissipation @ TA = 250C Operating & Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC IB PT TJ, Tstg Symbol RθJC 2N1479 2N1481 40 60 12 1.5 1.0 1.0 2N1480 2N1482 55 100 Unit Vdc Vdc Vdc Adc Adc W 0 -65 to +200 Max. 35 C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Unit 0 C/W TO-5* *See Appendix A for Package Outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise no.

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2N1482 : TECHNICAL DATA NPN SILICON MEDIUM POWER TRANSISTOR Qualified per MIL-PRF-19500/207 Devices 2N1479 2N1480 2N1481 2N1482 Qualified Level MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base-Current Total Power Dissipation @ TA = 250C Operating & Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC IB PT TJ, Tstg Symbol RθJC 2N1479 2N1481 40 60 12 1.5 1.0 1.0 2N1480 2N1482 55 100 Unit Vdc Vdc Vdc Adc Adc W 0 -65 to +200 Max. 35 C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Unit 0 C/W TO-5* *See Appendix A for Package Outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise no.

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2N1484 : This family of high-frequency, epitaxial planar transistors feature low saturation voltage. Qualified Levels: JAN and JANTX Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • JEDEC registered 2N1483 through 2N1486 series. • JAN and JANTX qualifications are available per MIL-PRF-19500/180. • RoHS compliant versions available (commercial grade only). TO-8 Package APPLICATIONS / BENEFITS • General purpose transistors for medium power applications requiring high frequency switching and low package profile. • Military and other high-reliability applications. MAXIMUM RATINGS Parameters / Test Conditions Collector-Emitter Voltage Collector-Base Vol.

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2N1486 : This family of high-frequency, epitaxial planar transistors feature low saturation voltage. Qualified Levels: JAN and JANTX Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • JEDEC registered 2N1483 through 2N1486 series. • JAN and JANTX qualifications are available per MIL-PRF-19500/180. • RoHS compliant versions available (commercial grade only). TO-8 Package APPLICATIONS / BENEFITS • General purpose transistors for medium power applications requiring high frequency switching and low package profile. • Military and other high-reliability applications. MAXIMUM RATINGS Parameters / Test Conditions Collector-Emitter Voltage Collector-Base Vol.




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