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2N2222AL

Part Number 2N2222AL
Manufacturer Microsemi
Title NPN SILICON SWITCHING TRANSISTOR
Description TECHNICAL DATA NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/255 Devices 2N2221A 2N2221AL 2N2221AUA 2N2221AUB Qualified Level JAN J...
Features package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol V(BR)CEO ICBO Min. 50 10 10 10 10 50 Max. Unit Vdc µAdc ηAdc µAdc ηAdc ηAdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 10 mAdc Collector-Base Cutoff Current VCB= 75 Vdc VCB= 60 V...

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2N2222A : 2N2222 / 2N2222A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range 2N2222 2N2222A 2N2222 2N2222A 2N2222 2N2222A Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 60 75 30 40 5 6 600 625 150 - 55 to + 150 Unit V V V mA mW OC OC SEMTECH ELECT.

2N2222A : 2N2221A 2N2222A Marking Code 2N2221A 2N2222A VCEO Collector-Emitter Voltage 40 VCBO Collector-Base Voltage 75 VEBO Emitter-Base Voltage 6.0 IC Collector Current Continuous 800 Power Dissipation at TA=25°C PD Derate above 25°C 500 2.28 PD TJ ,TSTG Power Dissipation at TC=25°C Derate above 25°C Operation and Storage Junction Temperature Range 1.2 6.85 -65 to +200 Unit V V V mA mW mW/° C W mW/° C °C TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060 Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415 .

2N2222A : 2N2221A, L, UA, UB & 2N2222A, L, UA, UB Radiation Hardened NPN Silicon Switching Transistors Rev. V1 Features  Qualified to MIL-PRF-19500/255  Levels JANSM-3K Rads (Si) JAN JANSD-10K Rads (Si) JANTX JANSP-30K Rads (Si) JANTXV JANSL-50K Rads (Si) JAN JANSR-100K Rads (Si)  TO-18 (TO-206AA), Surface mount UA & UB Packages Applications  Switching and Linear Applications  DC and VHF Amplifier Applications Electrical Specifications @ TA = 25°C Parameter Test Conditions Symbol Units Minimum Maximum Off Characteristics: Collector - Emitter Breakdown IC = 10 mAdc V(BR)CEO Vdc 50 — Collector - Base Cutoff Current Emitter - Base Cutoff Current VCB = 75 Vdc VCB = 60 Vdc VEB = 6.0 Vd.

2N2222A : The 2N2219A and 2N2222A are silicon Planar Epitaxial NPN transistors in Jedec TO-39 (for 2N2219A) and in Jedec TO-18 (for 2N2222A) ) metal case. They are designed for high speed t(s switching application at collector current up to c 500mA, and feature useful current gain over a u wide range of collector current, low leakage Prod currents and low saturation voltage. TO-18 TO-39 - Obsolete INTERNAL SCHEMATIC DIAGRAM solete Product(s) ABSOLUTE MAXIMUM RATINGS ObSymbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) 75 V VCEO Collector-Emitter Voltage (IB = 0) 40 V VEBO Emitter-Base Voltage (IC = 0) 6 V IC Collector Current 0.6 A ICM Collector Peak Current (tp <.

2N2222A : The CENTRAL SEMICONDUCTOR 2N2221A and 2N2222A are silicon NPN epitaxial planar transistors designed for small signal, general purpose switching applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD PD TJ, Tstg ΘJA ΘJC 75 40 6.0 800 500 1.8 -65 to +200 350 97 UNITS V V V mA mW W °C °C/W °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICBO VCB=60V 10 n.

2N2222A : The 2N2222A is silicon planar epitaxial NPN transistors in Jedec TO-18 metal case. It is designed for high speed switching application at collector current up to 500mA, and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltage. 2N2222A NPN Transistor ABSOLUTE MAXIMUM RATINGS Parameter Collector-Base Votlage (IE=0) Collector-Emitter Voltage (IB=0) Emitter-Base Voltage(IC=0) Collector Current Total Dissipation at TA≤25℃ at TC≤25℃ Thermal Resistance Junction to Ambient Thermal Resistance Junction to Case Operating Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC Ptot Rthja Rthjc TJ TSTG ELECTRICAL CHARACTERI.

2N2222A : PN2222A / 2N2222A PN2222A / 2N2222A NPN General purpose Si-Epitaxial PlanarTransistors Si-Epitaxial Planar-Transistoren für universellen Einsatz Version 2005-11-17 Power dissipation Verlustleistung E BC Plastic case Kunststoffgehäuse 16 9 18 Weight approx. – Gewicht ca. 2 x 2.54 Dimensions / Maße [mm] Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack NPN 625 mW TO-92 (10D3) 0.18 g Maximum ratings (TA = 25°C) Collector-Emitter-volt. - Kollektor-Emitter-Spannung E open Collector-Emitter-volt. - Kollektor-Emitter-Spannung B open Emitter-Base-voltage - Emitter-Basis-Sp.

2N2222A : 2N2222A Small Signal Switching Transistor NPN Silicon Features • MIL−PRF−19500/255 Qualified • Available as JAN, JANTX, and JANTXV MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Characteristic Symbol Value Unit Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Total Device Dissipation @ TC = 25°C Operating and Storage Junction Temperature Range VCEO VCBO VEBO IC PT PT TJ, Tstg 50 75 6.0 800 500 1.0 −65 to +200 Vdc Vdc Vdc mAdc mW W °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 325 °C/W Thermal Resistance, Junction to Case RqJC.

2N2222A : MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • High current (max.800mA) • Low voltage (max.40V) • Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant. See ordering information) Maximum Ratings Symbol Rating VCEO Collector-Emitter Voltage 2N2222 2N2222A VCBO Collector-Base Voltage 2N2222 2N2222A VEBO Emitter-Base Voltage 2N2222 2N2222A IC Collector Current (DC) ICM Peak Collector Current IBM Peak Base Current TJ Operating Junction Temperature TSTG Storage Temperature Thermal Characteristics Rating 30 40 60 75 5.0 6.0 800 800 200 -.

2N2222A : LAB MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) SEME 2N2222A HIGH SPEED MEDIUM POWER, NPN SWITCHING TRANSISTOR 5.33 (0.210) 4.32 (0.170) FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR • HIGH SPEED SATURATED SWITCHING • ALSO AVAILABLE IN CERAMIC SURFACE MOUNT PACKAGE 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. 3 2 1 TO–18 METAL PACKAGE Underside View PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD PD TJ , TSTG Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Collector Current Total Device Dissipation @ TA = 25°C Derate.

2N2222A : TECHNICAL DATA NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/255 Devices 2N2221A 2N2221AL 2N2221AUA 2N2221AUB Qualified Level JAN JANTX JANTXV JANS JANHC 2N2222A 2N2222AL 2N2222AUA 2N2222AUB MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C 2N2221A, L; 2N2222A, L (1) 2N2221AUA; 2N2222AUA (2) 2N2221AUB; 2N2222AUB (1) Operating & Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PT Top, Tstg Symbol RθJA All Types 50 75 6.0 800 0.5 0.65 0.50 -65 to +200 Max. 325 210 325 Unit Vdc Vdc Vdc mAdc W TO-18* (TO-206AA) 2N2221A, 2N2222A 0 C THERMAL CHARACTERISTICS Characte.

2N2222A : NPN switching transistor in a TO-18 metal package. PNP complement: 2N2907A. 3 2N2222; 2N2222A PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION handbook, halfpage 1 3 2 MAM264 2 1 Fig.1 Simplified outline (TO-18) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage 2N2222 2N2222A VCEO collector-emitter voltage 2N2222 2N2222A IC Ptot hFE fT collector current (DC) total power dissipation DC current gain transition frequency 2N2222 2N2222A toff turn-off time ICon = 150 mA; IBon = 15 mA; IBoff = −15 mA Tamb ≤ 25 °C IC = 10 mA; VCE = 10 V IC = 20 mA; VCE = 20 V; f = 100 MHz 250 300 − − − 250 MHz MHz ns open base − − − − 75 30 40 800 500 − V V .

2N2222A : SYMBOL 2N2221A,22A Collector -Emitter Voltage VCEO 40 Collector -Base Voltage VCBO 75 Emitter -Base Voltage VEBO 6.0 Collector Current Continuous IC 800 Power Dissipation @Ta=25 degC PD 500 Derate Above 25deg C 2.28 @ Tc=25 degC PD 1.2 Derate Above 25deg C 6.85 Operating And Storage Junction Tj, Tstg -65 to +200 Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION Collector -Emitter Voltage Collector -Base Voltage Emitter-Base Voltage Collector-Cut off Current SYMBOL TEST CONDITION VCEO VCBO VEBO ICBO IC=10mA,IB=0 IC=10uA.IE=0 IE=10uA, IC=0 VCB=60V, IE=0 VALUE MIN MAX 40 75 6.0 - - 10 Emitter-Cut off Current Base.

2N2222A : NPN 2N2221 – 2N2221A 2N2222 – 2N2222A SWITCHING SILICON TRANSISTORS The 2N2221-A and 2N2222-A are NPN transistors mounted in TO-18 metal case . They are designed for high-speed switching applications and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltages. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Value Symbol Ratings www.DataSheet.net/ 2N2221 2N2222 30 60 5 2N2221A 2N2222A 40 75 6 800 Unit VCEO VCBO VEBO IC PD Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Tamb = 25° Total Power Dissipation Tcase= 25° V V V mA W 0.5 1.8 175 -65 to +200 °C °C TJ TStg Junction Temperature Sto.

2N2222A : SYMBOL 2N2222A Collector -Emitter Voltage VCEO 40 Collector -Base Voltage VCBO 75 Emitter -Base Voltage VEBO 6.0 Collector Current Continuous IC 800 Power Dissipation @Ta=25 degC PD 500 Derate Above 25deg C 2.28 @ Tc=25 degC PD 1.2 Derate Above 25deg C 6.85 Operating And Storage Junction Tj, Tstg -65 to +200 Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION Collector -Emitter Voltage Collector -Base Voltage Emitter-Base Voltage Collector-Cut off Current SYMBOL TEST CONDITION VCEO VCBO VEBO ICBO IC=10mA,IB=0 IC=10uA.IE=0 IE=10uA, IC=0 VCB=60V, IE=0 VALUE MIN MAX 40 75 6.0 - - 10 Emitter-Cut off Current Base-Cut.

2N2222A : 2N2222A Silicon NPN Transistor Small Signal General Purpose Amplifier & Switch TO−18 Type Package Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA Tot.

2N2222A : SEMICOA Corporation offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N2222AJ) • JANTX level (2N2222AJX) • JANTXV level (2N2222AJV) • JANS level (2N2222AJS) • JANSR level (2N2222AJSR) 2N2222A Silicon NPN Transistor Data Sheet Applications • General purpose • Low power • NPN silicon transistor • QCI to the applicable level • 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS • Radiation testing (total dose) upon request Please contact SEMICOA for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Po.




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