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2N2484 Datasheet PDF


Part Number 2N2484
Manufacturer Philips
Title NPN general purpose transistor
Description NPN transistor in a TO-18; SOT18 metal package. Fig.1 handbook, halfpage 1 2N2484 PINNING PIN 1 2 3 emitter base collector, connected to the case...
Features
• Low current (max. 50 mA)
• Low voltage (max. 60 V) APPLICATIONS
• General purpose switching and amplification
• High performance (low-level), low-noise amplifier applications both for direct current and frequencies up to 100 MHz. DESCRIPTION NPN transistor in a TO-18; SOT18 metal package. Fig.1 ha...

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Datasheet 2N2484 PDF File








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2N2480 : MAXIMUM RATINGS Rating 2N2060,A Symbol 2N2223,A 2N2480 2N2480A Collector-Emitter Voltage Collector-Emitter Voltage VCEO 60 40 40 VCER 80 — - Collector-Base Voltage VCBO 100 75 80 Emitter-Base Voltage VEBO 7.0 5.0 5.0 —Collector Current Continuous ic 500 One Die All Die Equal Power Unit Vdc Vdc Vdc Vdc mAdc Total Device Dissipation @ TA = 25°C 2N2060,A 2N2223,A 2N2480.A Derate above 25°C 2N2060.A 2N2223.A 2N2480,A PD 0.5 0.5 0.3 2.86 2.86 1.72 0.6 0.6 0.6 3.43 3.43 3.43 mW mW/°C Total Device Dissipation @ TC = 25°C 2N2060.A 2N2223,A 2N2480,A Derate above 25°C 2N2060.A 2N2223.A 2N2480.A Pd Operating and Storage Junction TJ' Tstg Temperature Range 1.5 3.0 1.6 .

2N2480 : The CENTRAL SEMICONDUCTOR 2N2480 and 2N2480A are dual silicon NPN transistors manufactured by the epitaxial planar process utilizing two individual chips mounted in a hermetically sealed metal case designed for differential amplifier applications. MARKING: FULL PART NUMBER TO-78 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage SYMBOL VCBO VCEO VEBO 75 40 5.0 Continuous Collector Current Power Dissipation (One Die) Power Dissipation (Both Dice) IC 500 PD 300 PD 600 Operating and Storage Junction Temperature TJ, Tstg -65 to +200 ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted) 2N2480 2N2480A SYMBOL T.

2N2480A : MAXIMUM RATINGS Rating 2N2060,A Symbol 2N2223,A 2N2480 2N2480A Collector-Emitter Voltage Collector-Emitter Voltage VCEO 60 40 40 VCER 80 — - Collector-Base Voltage VCBO 100 75 80 Emitter-Base Voltage VEBO 7.0 5.0 5.0 —Collector Current Continuous ic 500 One Die All Die Equal Power Unit Vdc Vdc Vdc Vdc mAdc Total Device Dissipation @ TA = 25°C 2N2060,A 2N2223,A 2N2480.A Derate above 25°C 2N2060.A 2N2223.A 2N2480,A PD 0.5 0.5 0.3 2.86 2.86 1.72 0.6 0.6 0.6 3.43 3.43 3.43 mW mW/°C Total Device Dissipation @ TC = 25°C 2N2060.A 2N2223,A 2N2480,A Derate above 25°C 2N2060.A 2N2223.A 2N2480.A Pd Operating and Storage Junction TJ' Tstg Temperature Range 1.5 3.0 1.6 .

2N2480A : The CENTRAL SEMICONDUCTOR 2N2480 and 2N2480A are dual silicon NPN transistors manufactured by the epitaxial planar process utilizing two individual chips mounted in a hermetically sealed metal case designed for differential amplifier applications. MARKING: FULL PART NUMBER TO-78 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage SYMBOL VCBO VCEO VEBO 75 40 5.0 Continuous Collector Current Power Dissipation (One Die) Power Dissipation (Both Dice) IC 500 PD 300 PD 600 Operating and Storage Junction Temperature TJ, Tstg -65 to +200 ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted) 2N2480 2N2480A SYMBOL T.

2N2481 : 2N2480,A For Specifications, See 2N2060 Data. 2N2481 (SILICON) 2N2481 JAN,JTXAVAILABLE "CASE 22 (TO-IS) Collector connected to case NPN silicon annular transistor for high- speed switching applications. MAXIMUM RATINGS Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Total Device Dissipation @ 25°C Ambient Temperature (Derate 2.06 mW/oC above 2SoC) Total Device Dissipation @ 25°C Case Temperature (Derate 6.9 mW/oC above 25°C) Junction Temperature Storage Temperature Symbol VCB VCEO VEB PD PD TJ Tstg Value 40 15 5.0 0.36 1.2 200 -65 to+ 200 Unit Vdc Vdc Vdc Watt Watts °c °c 2-304 2N2481 (Continued) ELECTRICAL CHARACTERISTICS (TA; 25°C unless otherwise no.

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2N2483 : .

2N2483 : Data Sheet No. 2C2484 Chip Type 2C2484 Geometry 0307 Polarity NPN Generic Packaged Part: 2N2483, 2N2484, 2N2920, 2N930 Chip type 2C2484 by Semicoa Semiconductors provides performance similar to these devices. Part Numbers: 2N930, 2N2483, 2N2484, 2N2920 Product Summary: APPLICATIONS: Designed for high speed switching applications. Features: • High speed switching capabilities Mechanical Specifications Metallization Bonding Pad Size Die Thickness Chip Area Top Surface Top Backside Emitter Base Al - 19.5 kÅ min. Au - 6.5 kÅ nom. 3.6 mils diameter 2.5 mils diameter 8 mils nominal 18 mils x 18 mils Silox Passivated Electrical Characteristics TA = 25oC Parameter BVCEO BVCBO ICBO Test condit.

2N2484 : SEME LAB MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) 2N2484 NPN SILICON AMPLIFIER TRANSISTOR FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 4.32 (0.170) 12.7 (0.500) 5.33 (0.210) min. 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. 31 2 TO18 PIN 1 = Emitter PIN 2 = Base PIN 3 = Collector ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage VCEO Collector – Emitter Voltage VEBO Emitter – Base Voltage IC Collector Current Continuous PD Total Device Dissipation @ TA =25°C Derate above 25°C 60V 60V 6V 50mA 360mW 2.06mW / °C PD Total Device Dissipation @ TC =25°C Derate above 25°C 1.2W 6.

2N2484 : The CENTRAL SEMICONDUCTOR 2N2484 type is an NPN silicon transistor designed for low noise amplifier applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA 60 60 6.0 50 360 -65 to +200 486 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=45V ICBO VCB=45V, TA=150°C ICEO VCE=5.0V IEBO VEB=5.0V BVCBO IC=10μA 60 BVCEO IC=10mA 60 BVEBO IE=10μA 6.0 VCE(SAT) IC=1.0mA, IB=100μA VBE(ON) .

2N2484 : .

2N2484 : TECHNICAL DATA NPN SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/376 Devices 2N2484 Qualified Level JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C (1) @ TC = +250C (2) Operating & Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PT TJ, Tstg Symbol RθJC 2N2484 60 60 6.0 50 360 1.2 -65 to +200 Max. 146 Unit Vdc Vdc Vdc mAdc mW W 0 C Unit C/W www.DataSheet4U.com THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 2.06 mW/0C above TA = +250C 2) Derate linearly 6.85 mW/0C above TC = +250C 0 TO- 18* (TO-206AA) *S.

2N2484 : NPN 2N2484 SILICON PLANAR EPITAXIAL TRANSISTORS The 2N2484 are a silicon planar epitaxial NPN transistors mounted in TO-18 metal package. They are intended for use in high-performance, low-noise amplifier circuits from audio to highfrequency. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO IC PD TJ TStg Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current @ Tamb = 25° www.DataSheet.net/ Value 60 60 6 50 0.36 1.2 0.68 200 -65 to +200 Unit V V V mA Watts °C °C Total Power Dissipation Junction Temperature Storage Temperature range @ Tcase= 25° @ Tcase100° THERMAL CHARACTERISTICS Symbol RthJ-a RthJ-c Ratings Thermal Resistanc.

2N2484 : MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Total Device Dissipation (2 T/\ = 25°C Derate above 25°C Total Device Dissipation (a Trj = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO "c PD pd Tj. Tstg Value 60 60 6.0 50 360 2.06 1.2 6.85 -65 to +200 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C 2N2484 JAN, JTX, JTXV AVAILABLE CASE 22-03, STYLE 1 TO-18 (TO-206AA) AMPLIFIER TRANSISTOR THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Lead Temperature 1/16" from Case for 10 Seconds Symbol Rfljc RflJAd.

2N2484 : NPN Bipolar Transistor Features: • Collector Emitter Breakdown Voltage • DC Current Gain • Current Gain Bandwidth Product • Low Noise Figure : BVCEO = 60 V dc (minimum) at IC = 10 mA dc : 1 µA dc to 10 mA dc : fT = 100 MHz (Typical) at IC = 500 µA dc : NF = 8 dB (Typical) at IC = 10 µA dc, f = 100 Hz TO-18 www.element14.com www.farnell.com www.newark.com Dimension Millimetres Minimum Maximum A 5.31 5.84 B 4.52 4.95 C 4.32 5.33 D 0.406 0.533 E - 0.762 F 0.406 0.483 G 2.54 BSC H 0.914 1.17 J 0.711 1.22 K 12.7 - L 6.35 - M 45° BSC N 1.27 BSC P - 1.27 Inches Minimum Maximum 0.209 0.23 0.178 0.195 0.17 0.21 0.016 0.021 - 0.03 0.016 0.019 0.1 BSC 0.036 0..

2N2484 : SYMBOL VALUE UNIT Collector -Emitter Voltage VCEO Collector -Base Voltage VCBO Emitter -Base Voltage VEBO Collector Current Continuous IC Power Dissipation @Ta=25 degC PD Derate Above 25 deg C Power Dissipation @Tc=25 degC PD Derate Above 25 deg C Operating And Storage Junction Tj, Tstg Temperature Range THERMAL RESISTANCE Junction to Case Rth(j-c) Junction to Ambient in Free Air Rth(j-a) * Lead Temperature TL 1/16" from Case for 10 Seconds ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION Collector -Emitter Voltage VCEO** IC=10mA,IB=0 Collector -Base Voltage VCBO IC=10uA.IE=0 Emitter -Base Voltage VEBO .




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