MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63800FP
7-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION M63800FP is a seven-circuit output-sourcing Darlington transistor array. The circuits are made of PNP and NPNtransistors. This semiconductor integrated circuit performs highcurrent driving with extremely low input-current supply. PIN CONFIGURATION
INPUT
16 →O1 15 →O2 14 →O3 13 →O4 OUTPUT 12 →O5 11 →O6 10 →O7 9 GND
IN1→ 1 IN2→ 2 IN3→ 3 IN4→ 4 IN5→ 5 IN6→ 6 IN7→ 7 VS 8
FEATURES High breakdown voltage (BV CEO ≥ 50V) High-current driving (Io(max) = –500mA) With output clamping diodes Driving available with CMOS IC output of 6-16V or with TTL output Wide operating temperature range (Ta = –20 to +75°C) Output current-sourcing type
Package type 16P2N-A
CIRCUIT DIAGRAM APPLICATION Drives of relays, printers, LEDs, fluorescent display tubes and lamps, and interfaces between MOS-bipolar logic systems and relays, solenoids, or small motors
VS 20K
INPUT
3K 7. 2K 1. 5K
3K OUTPUT
FUNCTION The M63800FP has seven circuits, which are made of input inverters and current-sourcing outputs. The outputs are made of PNPtransistors and NPN Darlington transistors. The PNPtransistor base current is constant. A spike-killer clamping diode is provided between each output pin and GND. V S (pin 8) and GND (pin 9) are used commonly among the eight circuits. The input has resistance of 3k Ω, and a maximum of 10V can be applied. The output current is 500mA maximum. Supply voltage V S is 50V maximum. The M63800FP is enclosed in a molded small flat package, enabling space-saving design.
GND The seven circuits share the VS and GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : Ω
ABSOLUTE MAXIMUM RATINGS
Symbol VCEO VS VI IO IF VR Pd Topr Tstg
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(Unless otherwise noted, Ta = –20 ~ +75 °C)
Parameter Collector-emitter voltage Supply voltage Input voltage Outp...