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BAW75


Part Number BAW75
Manufacturer General
Title Small-Signal Diodes
Description BAW75 and BAW76 Small-Signal Diodes DO-204AH (DO-35 Glass) t c u rod P New Features • Silicon Epitaxial Planar Diodes • Fast switching diodes. M...
Features
• Silicon Epitaxial Planar Diodes
• Fast switching diodes. Mechanical Data Case: DO-35 Glass Case Weight: approx. 0.13g Packaging Codes/Options: D7/10K per 13” reel (52mm tape), 20K/box D8/10K per Ammo tape (52mm tape), 20K/box Dimensions in inches and (millimeters) Maximum Ratings and Thermal Ch...

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BAW75 : www.vishay.com BAW75 Vishay Semiconductors Small Signal Switching Diode FEATURES • Silicon epitaxial planar diode • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Extreme fast switches DESIGN SUPPORT TOOLS click logo to get started Models Available MECHANICAL DATA Case: DO-35 (DO-204AH) Weight: approx. 125 mg Cathode band color: black Packaging codes / options: TAP/10K per ammopack (52 mm tape), 50K/box PARTS TABLE PART ORDERING CODE BAW75 BAW75-TAP TYPE MARKING BAW75 CIRCUIT CONFIGURATION Single ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL R.

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BAW78 : BAW78.../BAW79... Silicon Switching Diodes  Switching applications  High breakdown voltage BAW78D 2 BAW79D 2 1 2 3 1 2 3 Type BAW78D BAW79D Parameter Package SOT89 SOT89 Configuration single common cathode Symbol VR VRM IF IFM IFS Ptot Value Marking GD GH Unit Maximum Ratings at TA = 25°C, unless otherwise specified Diode reverse voltage Peak reverse voltage Forward current Peak forward current Surge forward current, t = 1 µs Total power dissipation BAW78D, TS ≤ 125°C BAW79D, TS ≤ 115°C Junction temperature Storage temperature Thermal Resistance Parameter 400 400 1 1 10 V A W 1 1 Tj Tstg Symbol RthJS 150 -65 ... 150 Value ≤ 25 ≤ 35 °C Unit Junction - soldering point1).

BAW78A : Silicon Switching Diodes BAW 78 A BAW 78 D Switching applications q High breakdown voltage q Type BAW 78 A BAW 78 B BAW 78 C BAW 78 D Marking GA GB GC GD Ordering Code (tape and reel) Q62702-A778 Q62702-A779 Q62702-A784 Q62702-A109 Pin Configuration Package1) SOT-89 Maximum Ratings Parameter Reverse voltage Peak reverse voltage Forward current Peak forward current Surge forward current t = 1 µs Total power dissipation TS = 125 ˚C Junction temperature Symbol VR VRM IF IFM IFS Ptot Tj Values Unit BAW 78 A BAW 78 B BAW 78 C BAW 78 D 50 50 100 100 1 1 10 1 150 – 65 + 150 W ˚C 200 200 400 400 A V Storage temperature range Tstg Thermal Resistance Junction - ambient2) Junction - solder.

BAW78A : BAW78A...BAW78D Silicon Switching Diodes  Switching applications  High breakdown voltage 1 2 3 2 VPS05162 2 1 EHA07007 Type BAW78A BAW78B BAW78C BAW78D Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage Forward current Peak forward current Marking GA GB GC GD 1=A 1=A 1=A 1=A Pin Configuration 2=C 2=C 2=C 2=C 3 = n.c. 3 = n.c. 3 = n.c. 3 = n.c. Package SOT89 SOT89 SOT89 SOT89 Symbol VR VRM IF IFM IFS Ptot Tj Tstg BAW 78A 50 50 BAW 78B 100 100 1 1 10 1 BAW 78C 200 200 BAW 78D 400 400 Unit V A Surge forward current, t = 1 s Total power dissipation , TS = 125 °C Junction temperature Storage temperature W °C 150 -65 ... 150 Thermal Resistance Junction - solder.

BAW78A-BAW78D : Silicon Switching Diodes BAW 78 A BAW 78 D Switching applications q High breakdown voltage q Type BAW 78 A BAW 78 B BAW 78 C BAW 78 D Marking GA GB GC GD Ordering Code (tape and reel) Q62702-A778 Q62702-A779 Q62702-A784 Q62702-A109 Pin Configuration Package1) SOT-89 Maximum Ratings Parameter Reverse voltage Peak reverse voltage Forward current Peak forward current Surge forward current t = 1 µs Total power dissipation TS = 125 ˚C Junction temperature Symbol VR VRM IF IFM IFS Ptot Tj Values Unit BAW 78 A BAW 78 B BAW 78 C BAW 78 D 50 50 100 100 1 1 10 1 150 – 65 + 150 W ˚C 200 200 400 400 A V Storage temperature range Tstg Thermal Resistance Junction - ambient2) Junction - solder.

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BAW78B : Silicon Switching Diodes BAW 78 A BAW 78 D Switching applications q High breakdown voltage q Type BAW 78 A BAW 78 B BAW 78 C BAW 78 D Marking GA GB GC GD Ordering Code (tape and reel) Q62702-A778 Q62702-A779 Q62702-A784 Q62702-A109 Pin Configuration Package1) SOT-89 Maximum Ratings Parameter Reverse voltage Peak reverse voltage Forward current Peak forward current Surge forward current t = 1 µs Total power dissipation TS = 125 ˚C Junction temperature Symbol VR VRM IF IFM IFS Ptot Tj Values Unit BAW 78 A BAW 78 B BAW 78 C BAW 78 D 50 50 100 100 1 1 10 1 150 – 65 + 150 W ˚C 200 200 400 400 A V Storage temperature range Tstg Thermal Resistance Junction - ambient2) Junction - solder.

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BAW78C : Silicon Switching Diodes BAW 78 A BAW 78 D Switching applications q High breakdown voltage q Type BAW 78 A BAW 78 B BAW 78 C BAW 78 D Marking GA GB GC GD Ordering Code (tape and reel) Q62702-A778 Q62702-A779 Q62702-A784 Q62702-A109 Pin Configuration Package1) SOT-89 Maximum Ratings Parameter Reverse voltage Peak reverse voltage Forward current Peak forward current Surge forward current t = 1 µs Total power dissipation TS = 125 ˚C Junction temperature Symbol VR VRM IF IFM IFS Ptot Tj Values Unit BAW 78 A BAW 78 B BAW 78 C BAW 78 D 50 50 100 100 1 1 10 1 150 – 65 + 150 W ˚C 200 200 400 400 A V Storage temperature range Tstg Thermal Resistance Junction - ambient2) Junction - solder.

BAW78C : BAW78A...BAW78D Silicon Switching Diodes  Switching applications  High breakdown voltage 1 2 3 2 VPS05162 2 1 EHA07007 Type BAW78A BAW78B BAW78C BAW78D Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage Forward current Peak forward current Marking GA GB GC GD 1=A 1=A 1=A 1=A Pin Configuration 2=C 2=C 2=C 2=C 3 = n.c. 3 = n.c. 3 = n.c. 3 = n.c. Package SOT89 SOT89 SOT89 SOT89 Symbol VR VRM IF IFM IFS Ptot Tj Tstg BAW 78A 50 50 BAW 78B 100 100 1 1 10 1 BAW 78C 200 200 BAW 78D 400 400 Unit V A Surge forward current, t = 1 s Total power dissipation , TS = 125 °C Junction temperature Storage temperature W °C 150 -65 ... 150 Thermal Resistance Junction - solder.




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