DatasheetsPDF.com

BAW78

Infineon Technologies AG
Part Number BAW78
Manufacturer Infineon Technologies AG
Description Silicon Switching Diodes
Published Jun 3, 2005
Detailed Description BAW78.../BAW79... Silicon Switching Diodes  Switching applications  High breakdown voltage BAW78D 2 BAW79D 2 1 2 ...
Datasheet PDF File BAW78 PDF File

BAW78
BAW78


Overview
BAW78.
.
.
/BAW79.
.
.
Silicon Switching Diodes  Switching applications  High breakdown voltage BAW78D 2 BAW79D 2 1 2 3 1 2 3 Type BAW78D BAW79D Parameter Package SOT89 SOT89 Configuration single common cathode Symbol VR VRM IF IFM IFS Ptot Value Marking GD GH Unit Maximum Ratings at TA = 25°C, unless otherwise specified Diode reverse voltage Peak reverse voltage Forward current Peak forward current Surge forward current, t = 1 µs Total power dissipation BAW78D, TS ≤ 125°C BAW79D, TS ≤ 115°C Junction temperature Storage temperature Thermal Resistance Parameter 400 400 1 1 10 V A W 1 1 Tj Tstg Symbol RthJS 150 -65 .
.
.
150 Value ≤ 25 ≤ 35 °C Unit Junction - soldering point1) BAW78D BAW79D 1 K/W Feb-03-2003 BAW78.
.
.
/BAW79.
.
.
1For calculation of RthJA please refer to Application Note Thermal Resistance Electrical Characteristics at T A = 25°C, unless otherwise specified Parameter Symbol Values Unit min.
typ.
max.
DC Characteristics 400 V Breakdown voltage V(BR) I (BR) = 100 µA Reverse current VR = 400 V VR = 400 V, TA = 150 °C Forward voltage IF = 1 A IF = 2 A AC Characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time I F = 200mA, I R = 200mA, measured at I R = 20mA RL = 100 Test circuit for reverse recovery time D.
U.
T.
IR - 1 50 µA VF CT t rr , V 10 1 1.
6 2 pF µs Puls generator: t p = 10µs, D = 0.
05, tr = 0.
6ns, R i = 50 Oscillograph ΙF EHN00019 Oscillograp: R = 50, tr = 0.
35ns C  1pF 2 Feb-03-2003 BAW78.
.
.
/BAW79.
.
.
Reverse current IR =  (TA ) VR = 400V 10 5 nA BAW 78A.
.
.
D EHB00097 Forward current IF =  (VF) TA = 25°C 10 1 BAW 78A.
.
.
D EHB00095 ΙR ΙF max A 10 4 5 10 0 10 3 5 typ.
10 -1 10 2 5 10 -2 10 1 0 50 100 ˚C TA 150 10 -3 0 1 V VF 2 Peak forward current IFM =  (tp) Forward current IF =  (TS ) BAW78D 10 2 BAW 79A.
.
.
D EHB00100 Ι FM A 10 1 D = 0.
005 0.
01 0.
02 0.
05 0.
1 0.
2 IF 1200 mA 1000 900 800 700 600 500 400 10 0 10 -1 300 tp tp D= T T 200 100 10-2 10-6 10-5 1...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)