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BB200

Philipss
Part Number BB200
Manufacturer Philipss
Description Low-voltage variable capacitance double diode
Published Jun 3, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BB200 Low-voltage variable capacitance double diode Product ...
Datasheet PDF File BB200 PDF File

BB200
BB200

Overview
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BB200 Low-voltage variable capacitance double diode Product specification 2001 Oct 12 Philips Semiconductors Product specification Low-voltage variable capacitance double diode FEATURES • Very steep C/V curve • C1: 70 pF; C4.
5: 13.
4 pF • C1 to C5 ratio: min.
5 • Low series resistance • Small plastic SMD package.
APPLICATIONS • Electronic tuning in FM-radio • Voltage Controlled Oscillators (VCO).
DESCRIPTION The BB200 is a variable capacitance double diode with a common cathode, fabricated in silicon planar technology and encapsulated in the SOT23 small plastic SMD package.
MARKING TYPE NUMBER BB200 MARKING CODE SBp 1 handbook, halfpage BB200 PINNING PIN 1 2 3 anode (a1) anode (a2) common cathode DESCRIPTION 3 3 2 1 2 MAM169 Fig.
1 Simplified outline (SOT23) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL Per diode VR IF Tstg Tj continuous reverse voltage continuous forward current storage temperature range operating junction temperature − − −55 −55 18 50 +150 +85 V mA °C °C PARAMETER MIN.
MAX.
UNIT CHARACTERISTICS Tj = 25 °C unless otherwise specified.
SYMBOL Per diode IR rs Cd C d ( 1V ) ---------------C d ( 5V ) reverse current diode series resistance diode capacitance capacitance ratio VR = 10 V f = 100 MHz; VR = 1.
5 V VR = 1 V; f = 1 MHz VR = 4.
5 V; f = 1 MHz f = 1 MHz − − 65.
8 12 5 − 0.
43 70 13.
4 − 50 0.
6 74.
2 14.
8 − nA Ω pF pF PARAMETER CONDITIONS MIN.
TYP.
MAX.
UNIT 2001 Oct 12 2 Philips Semiconductors Product specification Low-voltage variable capacitance double diode GRAPHICAL DATA BB200 handbook, full pagewidth 100 MGU474 Cd (pF) 80 60 40 20 0 10−1 1 10 VR (V) 102 Fig.
2 Diode capacitance as a function of reverse voltage; typical values.
103 handbook, halfpage IR (nA) MGU475 10−3 handbook, halfpage TCd (K−1) MGU476 102 10−4 10 1 0 20 40 60 80 Tj (°C) 100 10−5 10−1 1 10 VR (V) 102 Fig.
4 Fig.
3 Reverse c...


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