DatasheetsPDF.com

BB302M

Part Number	BB302M
Manufacturer	Hitachi
Description	Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Published	Jun 3, 2005
Detailed Description	BB302M Build in Biasing Circuit MOS FET IC VHF RF Amplifier ADE-208-572 A (Z) 2nd. Edition September 1997 Features • Bu...
Datasheet	BB302M PDF File

Overview

BB302M Build in Biasing Circuit MOS FET IC VHF RF Amplifier ADE-208-572 A (Z) 2nd.
Edition September 1997 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space.
• Low noise characteristics; (NF = 1.
7 dB typ.
at f = 200 MHz) • Withstanding to ESD; Build in ESD absorbing diode.
Withstand up to 240V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; MPAK-4(SOT-143mod) Outline MPAK-4 2 3 1 4 1.
Source 2.
Gate1 3.
Gate2 4.
Drain • Note 1 Marking is “BW–”.
• Note 2 BB302M is individual type number of HITACHI BBFET.
BB302M Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate1 to source voltage Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12...

Similar Datasheet

BB301 Build in Biasing Circuit MOS FET IC UHF RF Amplifier - Hitachi
BB301 Build in Biasing Circuit MOS FET IC UHF RF Amplifier - Hitachi
BB301C Build in Biasing Circuit MOS FET IC UHF RF Amplifier - Hitachi
BB301M Build in Biasing Circuit MOS FET IC UHF RF Amplifier - Hitachi
BB302C Build in Biasing Circuit MOS FET IC UHF RF Amplifier - Hitachi
BB302M Build in Biasing Circuit MOS FET IC UHF RF Amplifier - Hitachi
BB304 Silicon Epitaxial Planar Dual Capacitance Diodes - Telefunken
BB304A Silicon Variable Capacitance Diode (For FM tuners Monolithic chip with common cathode for perfect tracking of both diodes) - Siemens Group
BB304C Build in Biasing Circuit MOS FET IC UHF RF Amplifier - Hitachi
BB304M Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier - Hitachi

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)