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BB402M

Hitachi
Part Number BB402M
Manufacturer Hitachi
Description Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
Published Jun 3, 2005
Detailed Description BB402M Build in Biasing Circuit MOS FET IC VHF RF Amplifier ADE-208-716A (Z) 2nd. Edition Dec. 1998 Features • Build in...
Datasheet PDF File BB402M PDF File

BB402M
BB402M

Overview
BB402M Build in Biasing Circuit MOS FET IC VHF RF Amplifier ADE-208-716A (Z) 2nd.
Edition Dec.
1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space.
• Low noise characteristics; (NF = 1.
7 dB typ.
at f = 200 MHz) • Withstanding to ESD; Build in ESD absorbing diode.
Withstand up to 240V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; MPAK-4R(SOT-143 var.
) Outline MPAK-4R 3 4 2 1 1.
Source 2.
Drain 3.
Gate2 4.
Gate1 Notes: 1.
Marking is “BX–”.
2.
BB402M is individual type number of HITACHI BBFET.
BB402M Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 +10 –0 ±10 25 150 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min 12 +10 ±10 — — 0.
4 0.
4 9 15 2.
2 0.
8 — 22 — Typ — — — — — 0.
7 0.
7 13 20 3.
0 1.
1 0.
017 26 1.
7 Max — — — +100 ±100 1.
0 1.
0 18 — 4.
0 1.
5 0.
04 — 2.
2 Unit V V V nA nA V V mA mS pF pF pF dB dB Test Conditions I D = 200µA, VG1S = VG2S = 0 I G1 = +10 µA, VG2S = VDS = 0 I G2 = ±10µA, VG1S = VDS = 0 VG1S = +9V, V G2S = VDS = 0 VG2S = ±9V, VG1S = VDS = 0 VDS = 9V, VG2S = 6V, ID = 100µA VDS = 9V, VG1S = 9V, ID = 100µA VDS = 9V, VG1 = 9V, VG2S = 6V RG = 120kΩ VDS = 9V, VG1 = 9V, VG2S =6V RG = 120kΩ, f = 1kHz VDS = 9V, VG1 = 9V VG2S =6V, RG = 120kΩ f = 1MHz VDS = 9V, VG1 = 9V, VG2S =6V RG = 120kΩ, f = 200MHz Drain to source breakdown voltage V(BR)DSS Gate1 to source breakdown voltage V(BR)G1SS Gate2 to source breakdown voltage V(BR)G2SS Gate1 to source cutoff current Gate2 to source cutoff current Gate1 to source cutoff voltage Gate2 to source cutoff voltage Drain current Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Power gain Noise figure I G1SS I G2SS VG1S(off) VG2S(off) I D(op) |yfs| c iss c oss c rss PG NF 2 BB402M Main Characteristi...


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