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BB669

Infineon Technologies AG
Part Number BB669
Manufacturer Infineon Technologies AG
Description Silicon Tuning Diode
Published Jun 3, 2005
Detailed Description BB669 Silicon Tuning Diode  For VHF 2-Band-hyperband-TV-tuners  Very high capacitance ratio  Low series resistance  ...
Datasheet PDF File BB669 PDF File

BB669
BB669

Overview
BB669 Silicon Tuning Diode  For VHF 2-Band-hyperband-TV-tuners  Very high capacitance ratio  Low series resistance  Extremely small plastic SMD package  Excellent uniformity and matching due to 2 1 "in-line" matching assembly procedure VPS05176 Type BB669 Marking 1 Pin Configuration 1=C 2=A Package SOD323 Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage (R  5k) Forward current Operating temperature range Storage temperature Symbol VR VRM IF Top Tstg Value 30 35 20 -55.
.
.
150 -55.
.
.
150 mA °C Unit V 1 Jul-05-2001 BB669 Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter DC characteristics Reverse current VR = 30 V Reverse current VR = 30 V, TA = 85 °C AC characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz Capacitance ratio VR = 2 V, VR = 25 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 28 V, f = 1 MHz Capacitance ratio 1) VR = 1 V, VR = 28 V, f = 1 MHz Series resistance VR = 8 V, f = 470 MHz Series inductance Ls 1.
8 nH 1) In-line matching.
For details please refer to Application Note 047 Symbol min.
IR IR - Values typ.
max.
10 200 Unit nA CT 51 39.
6 2.
6 2.
5 CT2 /CT25 CT1 /CT28 14.
5 18 56.
5 43.
4 2.
8 2.
7 15.
5 20.
9 0.
85 61.
5 47.
2 3 2.
9 17 23.
3 2 - pF - CT /CT rs %  2 Jul-05-2001 BB669 Diode capacitance CT = f (VR) f = 1MHz Reverse current IR = f (VR ) TA = Parameter 10 -9 60 pF 50 A 85°C 45 CT 40 35 30 25 20 15 10 5 0 0 4 8 12 16 20 24 V IR 10 -10 25°C 30 10 -11 0 5 10 15 20 V 30 VR VR Temperature coefficient of the diode capacitance TCc = f (VR) 10 -3 1/°C TCc 10 -4 10 -5 0 10 10 1 V 10 2 VR 3 Jul-05-2001 ...


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