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BBY56-03W

Siemens Group
Part Number BBY56-03W
Manufacturer Siemens Group
Description Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance)
Published Jun 3, 2005
Detailed Description BBY 56-03W Silicon Tuning Diode Preliminary data • Excellent linearity • High Q hyperabrupt tuning diode • Low series in...
Datasheet PDF File BBY56-03W PDF File

BBY56-03W
BBY56-03W

Overview
BBY 56-03W Silicon Tuning Diode Preliminary data • Excellent linearity • High Q hyperabrupt tuning diode • Low series inductance • Designed for low tuning voltage operation for VCO’s in mobile communications equipment • Very low capacitance spread 2 1 VPS05176 Type BBY 56-03W Marking 6 cathd.
red Ordering Code Q62702- Pin Configuration 1=C 2=A Package SOD-323 Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Value 10 20 -55 .
.
.
+150 -55 .
.
.
+150 Unit V mA °C VR IF T op T stg Semiconductor Group Semiconductor Group 11 Au 1998-11-01 -14-1998 BBY 56-03W Electrical Characteristics at TA = 25 °C, unless otherwise specified.
Parameter Symbol Values min.
DC characteristics Reverse current typ.
max.
1 100 Unit IR IR - nA µA VR = 8 V Reverse current VR = 8 V, TA = 65 °C AC characteristics Diode capacitance CT 59 39 22 19.
4 15.
9 2.
45 0.
3 0.
09 0.
6 67 43 27.
2 23.
7 19 - pF VR = 0.
32 V, f = 1 MHz VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 2.
38 V, f = 1 MHz VR = 3 , f = 1 MHz Capacitance ratio CT1/C T3 rs CC Ls - Ω pF nH VR = 1 V, VR = 3 V, f = 1 MHz Series resistance VR = 1 V, f = 330 MHz Case capacitance f = 1 MHz Series inductance chip to ground Semiconductor Group Semiconductor Group 22 Au 1998-11-01 -14-1998 ...


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