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BC160-16

Philipss
Part Number BC160-16
Manufacturer Philipss
Description PNP Medium Power Transistor
Published Jun 3, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET M3D110 BC160; BC161 PNP medium power transistors Product specification Supersedes d...
Datasheet PDF File BC160-16 PDF File

BC160-16
BC160-16

Overview
DISCRETE SEMICONDUCTORS DATA SHEET M3D110 BC160; BC161 PNP medium power transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 12 Philips Semiconductors Product specification PNP medium power transistors FEATURES • High current (max.
1 A) • Low voltage (max.
60 V).
APPLICATIONS • General purpose applications.
DESCRIPTION PNP medium power transistor in a TO-39 metal package.
NPN complements: BC140 and BC141.
3 1 handbook, halfpage 2 BC160; BC161 PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION 3 2 1 MAM334 Fig.
1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage BC160 BC161 VCES collector-emitter voltage BC160 BC161 ICM Ptot hFE peak collector current total power dissipation DC current gain BC160-10; BC161-10 BC160-16; BC161-16 fT transition frequency IC = −50 mA; VCE = −10 V; f = 100 MHz Tcase ≤ 45 °C IC = −100 mA; VCE = −1 V 63 100 50 100 160 − 160 250 − MHz open base − − − − − − − − −40 −60 −1.
5 3.
7 V V A W open emitter − − − − −40 −60 V V CONDITIONS MIN.
TYP.
MAX.
UNIT 1997 May 12 2 Philips Semiconductors Product specification PNP medium power transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VCBO BC160 BC161 VCEO collector-emitter voltage BC160 BC161 VEBO IC ICM IBM Ptot Tstg Tj Tamb emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tcase ≤ 45 °C open collector open base − − − − − − − PARAMETER collector-base voltage CONDITIONS open emitter − − BC160; BC161 MIN.
MAX.
−40 −60 −40 −60 −5 −1 −1.
5 −200 3.
7 +150 175 +150 UNIT V V V V V A A mA W °C °C °C −65 − −65 THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-c PARAMETER thermal resistance from junction to ambient thermal resistance from junction to case CONDITIONS in free air VALUE 200...


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