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BC182

Fairchild
Part Number BC182
Manufacturer Fairchild
Description AMPLIFIER TRANSISTOR
Published Jun 3, 2005
Detailed Description BC182 BC182 NPN General Purpose Amplifier • This device is designed for general purpose amplifier application at collec...
Datasheet PDF File BC182 PDF File

BC182
BC182

Overview
BC182 BC182 NPN General Purpose Amplifier • This device is designed for general purpose amplifier application at collector currents to 100mA.
• Sourced from process 10.
1 TO-92 1.
Collector 2.
Base 3.
Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Storage Junction Temperature Range Value 50 60 6 100 - 55 ~ 150 Units V V V mA °C Electrical Characteristics TC=25°C unless otherwise noted Symbol www.
DataSheet4U.
com Parameter Test Condition IC = 2mA, IB = 0 IC = 10µA, IE = 0 IE = 10µA, IC = 0 VCB = 50V, VBE = 0 VEB = 4V, IE = 0 VCE = 5V, IC = 10µA VCE = 5V, IC = mA VCE = 5V, IC = 100mA IC = 10mA, IB = 0.
5mA IC = 100mA, IB = 5mA IC = 100mA, IB = 5mA VCE = 5V, IC = 2mA VCE = 5V, IC = 10mA, f = 100MHz VCE = 10V, IC = 0, f = 1MHz VCE = 5V, IC = 2mA, f = 1KHz VCE = 5V, IC = 0.
2mA RS = 2KΩ, f = 1KHz Min.
50 60 6 Typ.
Max.
Units V V V Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage V(BR)CBO V(BR)EBO ICBO IEBO Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter-Base Leakage Current 15 15 40 120 80 nA nA On Characteristics hFE DC Current Gain 500 0.
25 0.
6 1.
2 V V V MHz 5 pF dB 500 10 VCE(sat) VBE(sat) VBE(on) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage 0.
55 150 125 0.
7 Dynamic Characteristics fT Current Gain Bandwidth Product Cob hfe NF Output Capacitance Small Signal Current Gain Noise Figure ©2003 Fairchild Semiconductor Corporation Rev.
A, September 2005 BC182 Thermal Characteristics TA=25°C unless otherwise noted Symbol PD RθJA RθJC Parameter Total Device Dissipation @TA=25°C Derate above 25°C Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Max.
350 2.
8 357 125 Units mW mW/°C mW/°C °C/W ©2003 Fairchild Semiconductor Corporation Rev.
A, September 2005 ...


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