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BC184L Datasheet PDF


Part Number BC184L
Manufacturer Fairchild
Title SILICON NPN SMALL SIGNAL TRANSISTOR
Description BC184L BC184L Silicon NPN Small Signal Transistor (Note 1) • BVCEO = 30V (Min.) • hFE = 130 (Min.) @VCE = 5.0V, IC = 100mA 1 TO-92 1. Emitter ...
Features IC = 2mA IE = 10µA VCB = 30V VEB = 3V VCE = 5V, IC = 10µA VCE = 5V, IC = 100mA IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5mA IC = 100mA, IB = 5mA VCE = 5V, IC = 2mA VCE = 10V, f = 1MHz VCE = 5V, IC = 10mA f = 100MHz VCE = 5V, IC = 2mA f = 1KHz VCE = 5V, IC = 200mA RG = 2KΩ, f = 1KHz 150 450 900 4 dB 0....

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Datasheet BC184L PDF File








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BC107 : NPN transistor in a TO-18; SOT18 metal package. PNP complement: BC177. 3 BC107; BC108; BC109 PINNING PIN 1 2 3 emitter base collector, connected to the case DESCRIPTION handbook, halfpage 1 3 2 MAM264 2 1 Fig.1 Simplified outline (TO-18; SOT18) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage BC107 BC108; BC109 VCEO collector-emitter voltage BC107 BC108; BC109 ICM Ptot hFE peak collector current total power dissipation DC current gain BC107 BC108 BC109 fT transition frequency IC = 10 mA; VCE = 5 V; f = 100 MHz Tamb ≤ 25 °C IC = 2 mA; VCE = 5 V 110 110 200 100 450 800 800 − MHz open base − − − − 45 20 200 300 V V mA mW open emitter − − 50 30 V V CONDITIONS.

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BC107 : .

BC107 : .

BC107 : The CENTRAL SEMICONDUCTOR BC107, BC108, BC109 series types are small signal NPN silicon transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg JC BC107 50 45 6.0 BC108 BC109 30 30 25 25 5.0 5.0 200 600 -65 to +200 175 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=45V (BC107) ICBO VCB=45V, TA=125°.

BC107 : Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation at T a=25ºC Derate above 25ºC Power Dissipation at T c=25ºC Derate above 25ºC Operating And Storage Junction Temperature Range THERMAL CHARACTERISTICS Junction to Ambient in free air Junction to Case SYMBOL VCEO VCBO VEBO IC PD PD Tj, Tstg BC107 45 50 6.0 BC108 25 30 5.0 200 300 1.72 750 4.29 - 65 to +200 BC109 25 30 5.0 UNIT V V V mA mW mW/ ºC mW mW/ ºC ºC Rth (j-a) Rth (j-c) 583 233 ºC/W ºC/W www.DataSheet4U.com ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise ) DESCRIPTION SYMBOL TEST CONDITION V IC=2mA, IB=0 Collector Emitter Voltage CEO VEBO IE=10µA, IC=.

BC107 : NPN BC107 – BC108 – BC109 LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS The BC107, BC108 and BC109 are silicon planar epitaxial NPN transistors mounted in TO-18 metal package. They are suitable for use in drive audio stages, low-noise input audio stages and as low power, high gain general purpose transistors. The complementary PNP are BC177, BC178 and BC179. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO IC ICM PD TJ TStg Collector-Emitter Voltage (IB =0) Collector-Base Voltage (IE =0) Emitter-Base Voltage (IC =0) Collector Current Collector Peak Current Total Power Dissipation @ Tamb = 25° Junction Temperature Storage Temperature range BC107 45 50 6 BC108 20 30 5 100 200.

BC107 : MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation « Ta = 25°C Derate above 25°C Total Device Dissipation r« Tc = 25°C Tc = 100°C Derate above 25°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol VCEO VCBO VEBO "C PD pd BC BC BC 107 108 109 45 25 25 50 30 30 65 5 0.2 0.6 2.28 1 6.67 Tj, T s tg -65 to +200 Unit Vdc Vdc Vdc Amp Watt mW/°C Watt mW/°C °C Symbol RftJC Max 175 Unit °C/W BC107 BC108 BC109 CASE 22-03, STYLE 1 TO-18 (TO-206AA) TRANSISTOR NPN SILICON ELECTRICAL CHARACTERISTICS (Ta = 25°C unless ot.

BC107 : Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Power Dissipation at Ta = 25°C Derate Above 25°C Power Dissipation at Tc = 25°C Derate Above 25°C Operating And Storage Junction Temperature Range Thermal Resistance Junction to Case SYMBOL VCEO VCBO VEBO IC PD PD Tj, Tstg BC107 BC108 BC109 UNIT 45 25 25 V 50 30 30 V 6.0 5.0 5.0 V 0.2 A 0.6 W.

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BC107A : The CENTRAL SEMICONDUCTOR BC107, BC108, BC109 series types are small signal NPN silicon transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg JC BC107 50 45 6.0 BC108 BC109 30 30 25 25 5.0 5.0 200 600 -65 to +200 175 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=45V (BC107) ICBO VCB=45V, TA=125°.

BC107A : Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation at T a=25ºC Derate above 25ºC Power Dissipation at T c=25ºC Derate above 25ºC Operating And Storage Junction Temperature Range THERMAL CHARACTERISTICS Junction to Ambient in free air Junction to Case SYMBOL VCEO VCBO VEBO IC PD PD Tj, Tstg BC107 45 50 6.0 BC108 25 30 5.0 200 300 1.72 750 4.29 - 65 to +200 BC109 25 30 5.0 UNIT V V V mA mW mW/ ºC mW mW/ ºC ºC Rth (j-a) Rth (j-c) 583 233 ºC/W ºC/W www.DataSheet4U.com ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise ) DESCRIPTION SYMBOL TEST CONDITION V IC=2mA, IB=0 Collector Emitter Voltage CEO VEBO IE=10µA, IC=.

BC107A : NPN BC107 – BC108 – BC109 LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS The BC107, BC108 and BC109 are silicon planar epitaxial NPN transistors mounted in TO-18 metal package. They are suitable for use in drive audio stages, low-noise input audio stages and as low power, high gain general purpose transistors. The complementary PNP are BC177, BC178 and BC179. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO IC ICM PD TJ TStg Collector-Emitter Voltage (IB =0) Collector-Base Voltage (IE =0) Emitter-Base Voltage (IC =0) Collector Current Collector Peak Current Total Power Dissipation @ Tamb = 25° Junction Temperature Storage Temperature range BC107 45 50 6 BC108 20 30 5 100 200.

BC107A : Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Power Dissipation at Ta = 25°C Derate Above 25°C Power Dissipation at Tc = 25°C Derate Above 25°C Operating And Storage Junction Temperature Range Thermal Resistance Junction to Case SYMBOL VCEO VCBO VEBO IC PD PD Tj, Tstg BC107 BC108 BC109 UNIT 45 25 25 V 50 30 30 V 6.0 5.0 5.0 V 0.2 A 0.6 W.




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