DatasheetsPDF.com

DF68544

Dynex
Part Number DF68544
Manufacturer Dynex
Description Fast Recovery Diode
Published Jun 3, 2005
Detailed Description DF685 DF685 Fast Recovery Diode Replaces March 1998 version, DS4303-1.3 DS4303-2.0 January 2000 APPLICATIONS s Snubber...
Datasheet PDF File DF68544 PDF File

DF68544
DF68544

Overview
DF685 DF685 Fast Recovery Diode Replaces March 1998 version, DS4303-1.
3 DS4303-2.
0 January 2000 APPLICATIONS s Snubber Diode For GTO Applications KEY PARAMETERS VRRM 4500V IF(AV) 445A IFSM 4500A Qr 650µC trr 5µs FEATURES s Double Side Cooling s High Surge Capability s Low Recovery Charge VOLTAGE RATINGS Type Number Repetitive Peak Reverse Voltage VRRM V Conditions DF685 45 4500 DF685 44 4400 DF685 43 4300 DF685 42 4200 DF685 41 4100 DF685 40 4000 Lower voltage grades available.
VRSM = VRRM + 100V Outline type code: M779b.
See Package Details for further information.
CURRENT RATINGS Symbol Double Side Cooled IF(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load, Tcase = 65oC Tcase = 65oC Tcase = 65oC 445 700 610 A A A Parameter Conditions Max.
Units Single Side Cooled (Anode side) IF(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load, Tcase = 65oC Tcase = 65oC Tcase = 65oC 280 440 365 A A A 1/8 DF685 SURGE RATINGS Symbol IFSM I2t IFSM I2t IFSM I2t Parameter Surge (non-repetitive) forward current 10ms half sine; with 0% VRRM, Tj = 150oC I2t for fusing Surge (non-repetitive) forward current 10ms half sine; with 50% VRRM, Tj = 150oC I2t for fusing Surge (non-repetitive) forward current 10ms half sine; with 100% VRRM, Tj = 150oC I2t for fusing A2s 64.
8x103 A2s kA 101.
25x103 3.
6 A2s kA Conditions Max.
4.
5 Units kA THERMAL AND MECHANICAL DATA Symbol Parameter Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case Single side cooled Cathode dc Clamping force 10kN with mounting compound On-state (conducting) Double side Single side -55 9.
0 0.
095 0.
01 0.
02 150 150 11.
0 o Min.
dc Anode dc - Max.
0.
045 0.
086 Units o C/W o C/W C/W C/W C/W o o Rth(c-h) Thermal resistance - case to heatsink o Tvj Tstg - Virtual junction temperature Storage temperature range Clamping force C C o kN CHARACTERISTICS Symbol VFM IRRM trr QRA1 ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)