DatasheetsPDF.com

DFM800NXM33-A000

Dynex
Part Number DFM800NXM33-A000
Manufacturer Dynex
Description Fast Recovery Diode Module Preliminary Information
Published Jun 3, 2005
Detailed Description DFM800NXM33-A000 DFM800NXM33-A000 Fast Recovery Diode Module Preliminary Information DS5473-1.3 October 2001 FEATURES ...
Datasheet PDF File DFM800NXM33-A000 PDF File

DFM800NXM33-A000
DFM800NXM33-A000


Overview
DFM800NXM33-A000 DFM800NXM33-A000 Fast Recovery Diode Module Preliminary Information DS5473-1.
3 October 2001 FEATURES s Low Reverse Recovery Charge s High Switching Speed s Low Forward Voltage Drop s Isolated Base s Dual Diodes Can Be Paralleled for 1600A Rating s MMC Baseplate With AlN Substrates KEY PARAMETERS VRRM VF (typ) (max) IF (max) IFM 3300V 2.
5V 800A 1600A External connection C1(K1) C2(K2) APPLICATIONS s Brake Chopper Diode s Boost and Buck Converters s Free-wheel Circuits s Motor Drives s Resonant Converters s Induction Heating s Multi-level Switch Inverters The DFM800NXM33-A000 is a dual 3300 volt, fast recovery diode (FRD) module.
Designed for low power loss, the module is suitable for a variety of high voltage applications in motor drives and power conversion.
Fast switching times and low reverse recovery losses allow high frequency operation making the device suitable for the latest drive designs employing pwm and high frequency switching.
These modules incorporate electrically isolated base plates and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.
C1 E1(A1) E2(A2) External connection External connection for single 1600A diode application Fig.
1 Circuit diagram E1 E2 C2 ORDERING INFORMATION Order As: DFM800NXM33-A000 Note: When ordering, please use the complete part number.
Outline type code: N (See package details for further information) Fig.
2 Electrical connections - (not to scale) 1/7 www.
dynexsemi.
com DFM800NXM33-A000 ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device.
In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package.
Appropriate safety precautions should always be followed.
Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25˚C unless stated otherwise Symbol VRRM IF IFM I2t P...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)