DatasheetsPDF.com

DG406BP25

Part Number	DG406BP25
Manufacturer	Dynex
Description	Gate Turn-off Thyristor
Published	Jun 3, 2005
Detailed Description	Replaces DS4090-5 DG406BP25 Gate Turn-off Thyristor DS4090-6 December 2021 (LN41382) FEATURES KEY PARAMETERS • Do...
Datasheet	DG406BP25 PDF File

Overview

Replaces DS4090-5 DG406BP25 Gate Turn-off Thyristor DS4090-6 December 2021 (LN41382) FEATURES KEY PARAMETERS • Double Side Cooling • High Reliability In Service • High Voltage Capability • Fault Protection Without Fuses • High Surge Current Capability • Turn-off Capability Allows Reduction in Equipment Size and Weight.
Low Noise Emission Reduces Acoustic Cladding Necessary For Environmental Requirements VDRM IT(AV) ITCM dVD/dt dIT/dt 2500V 500A 1200A 1000V/µs 300A/µs APPLICATIONS • Variable speed AC motor drive inverters (VSD- AC) • Uninterruptable Power Supplies • High Voltage Converters • Choppers • Welding • Induction Heating • DC/DC Converters Outline type code: P (See Package Details for further information) Fig.
1 Package outline VOLTAGE RATINGS Type Number DG406BP25 Repetitive Peak Off-state Voltage VDRM (V) 2500 Repetitive Peak Reverse Voltage VRRM (V) 16 Conditions Tvj = 125°C, IDM =50mA, IRRM = 50mA CURRENT RATINGS Symbol Parameter ITCM Repetitive peak controllable on-state current IT(AV) Mean on-state current IT(RMS) RMS on-state current Conditions VD = VDRM, Tj = 125°C, dIGQ/dt = 30A/s, CS = 1.
5 F THS = 80°C, Double side cooled.
Half sine 50Hz THS = 80°C, Double side cooled.
Half sine 50Hz Max.
1200 500 630 Units A A A www.
dynexsemi.
com 1/14 DG406BP25 SURGE RATINGS Symbol Parameter Test Conditions Max.
Units ITSM I2t diT/dt dVD/dt LS Surge (non repetitive) on-state current 10ms half sine.
Tj = 125°C I2t for fusing Critical rate of rise of on-state current Rate of rise of off-state voltage Peak stray inductance in snubber circuit 10ms half sine.
Tj = 125°C VD = 1800V, IT = 1000A, Tj = 125°C, IFG > 30A, Rise time > 1.
0 s To 66% VDRM; RGK  1.
5, Tj = 125°C To 66% VDRM; VRG  -2V, Tj = 125°C IT = 1000A, VDM = 1800V, Tj = 125°C, diGQ/dt = 30A/s, CS = 1.
0F GATE RATINGS 8.
0 0.
32 300 500 1000 200 kA MA2s A/s V/s V/s nH Symbol Parameter VRGM IFGM PFG(AV) PRGM diGQ/dt tON(min) tOFF(min) Peak reverse gate volta...

Similar Datasheet

DG406BP25 Gate Turn-off Thyristor - Dynex

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)