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DG858BW45

Dynex
Part Number DG858BW45
Manufacturer Dynex
Description Gate Turn-off Thyristor
Published Jun 3, 2005
Detailed Description DG858BW45 DG858BW45 Gate Turn-off Thyristor Replaces July 1999 version, DS4096-3.0 DS4096-4.0 January 2000 FEATURES q ...
Datasheet PDF File DG858BW45 PDF File

DG858BW45
DG858BW45


Overview
DG858BW45 DG858BW45 Gate Turn-off Thyristor Replaces July 1999 version, DS4096-3.
0 DS4096-4.
0 January 2000 FEATURES q q q q q q Double Side Cooling High Reliability In Service High Voltage Capability Fault Protection Without Fuses High Surge Current Capability Turn-off Capability Allows Reduction In Equipment Size And Weight.
Low Noise Emission Reduces Acoustic Cladding Necessary For Environmental Requirements KEY PARAMETERS 3000A ITCM VDRM 4500V 1180A IT(AV) dVD/dt 1000V/µs 300A/µs diT/dt APPLICATIONS q q q q q q q Variable speed A.
C.
motor drive inverters (VSD-AC) Uninterruptable Power Supplies High Voltage Converters Choppers Welding Induction Heating DC/DC Converters Package outline type code: W.
See Package Details for further information.
Figure 1.
Package outline VOLTAGE RATINGS Type Number Repetitive Peak Off-state Voltage VDRM V 4500 Repetitive Peak Reverse Voltage VRRM V 16 Conditions DG858BW45 Tvj = 125oC, IDM = 100mA, IRRM = 50mA CURRENT RATINGS Symbol ITCM IT(AV) IT(RMS) Parameter Conditions Max.
3000 1180 1850 Units A A A 1/19 Repetitive peak controllable on-state current VD = 66% VDRM, Tj = 125oC, diGQ/dt = 40A/µs, Cs = 3µF Mean on-state current RMS on-state current THS = 80oC.
Double side cooled, half sine 50Hz THS = 80oC.
Double side cooled, half sine 50Hz DG858BW45 SURGE RATINGS Symbol ITSM I2 t diT/dt Parameter Surge (non-repetitive) on-state current I2t for fusing Critical rate of rise of on-state current Conditions 10ms half sine.
Tj = 125oC 10ms half sine.
Tj =125oC VD = 3000V, IT = 3000A, Tj = 125oC, IFG > 40A, Rise time > 1.
0µs To 66% VDRM; RGK ≤ 1.
5Ω, Tj = 125oC To 66% VDRM; VRG = -2V, Tj = 125oC Peak stray inductance in snubber circuit IT = 3000A, VD = VDRM,-T - j = 125˚C, dI/GQ = 40A/ µs, Cs = 3.
0µF Max.
20.
0 Units kA A2s A/µs V/µs 2.
0 x 106 300 130 1000 200 dVD/dt LS Rate of rise of off-state voltage V/µs nH GATE RATINGS Symbol VRGM IFGM PFG(AV) Parameter Peak reverse gate voltage Peak forward gate current Average forw...



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