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SD57045

ST Microelectronics
Part Number SD57045
Manufacturer ST Microelectronics
Description RF POWER TRANSISTOR
Published Jun 6, 2005
Detailed Description ® SD57045 RF POWER TRANSISTORS The LdmoST FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs ν ν ν ν EXCE...
Datasheet PDF File SD57045 PDF File

SD57045
SD57045

Overview
® SD57045 RF POWER TRANSISTORS The LdmoST FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs ν ν ν ν EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 45 W PEP with 13 dB gain @ 945 MHz BeO FREE PACKAGE M243 (Epoxy Sealed) ORDER CODE SD57045 BRANDING TSD57045 DESCRIPTION The SD57045 is a common source N-Channel Enhancement-Mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.
0 GHz.
The SD57045 is designed for high gain and broadband performance operating in common source mode at 28V.
It is ideal for base stations applications requiring high linearity.
PIN CONNECTION 1.
Drain 2.
Gate ABSOLUTE MAXIMUM RATINGS (Tcase = 25 oC) Symbol V (BR)DSS V DGR V GS ID P DI SS Tj T STG Parameter Drain Source Voltage Drain-Gate Voltage (R GS = 1 M Ω ) Gate-Source Voltage Drain Current Power Dissipation (@ T c = 70 C) Max.
O perating Junction Temperature Storage Temperature o 3.
Source Value 65 65 ± 20 5 93 200 -65 to 200 Uni t V V V A W o o C C THERMAL DATA (Tcase = 70 oC) R th (j-c) R th(c -s) Junction-Case Thermal Resistance Case-Heatsink Thermal Resistance 1.
4 0.
45 o o C/W C/W * Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent).
March 2000 1/11 SD57045 ELECTRICAL SPECIFICATION (Tcase = 25 oC) STATIC Symb ol V (BR)DSS I DSS I GSS V GS(Q) V DS( ON) G FS C ISS C OSS C RSS V GS = 0V V GS = 0V V GS = 20V V DS = 28V V GS = 10V V DS = 10V V GS = 0V V GS = 0V V GS = 0V Parameter I DS = 1 mA V DS = 28 V V DS = 0 V I D = 250 mA ID = 3 A ID = 5 A V DS = 28 V V DS = 28 V V DS = 28 V f = 1 MHz f = 1 MHz f = 1 MHz 2.
0 2.
5 0.
7 2.
7 80 40 3.
2 Min.
65 1 1 5.
0 0.
9 Typ .
Max.
Un it V µA µA V V mho pF pF pF REF.
7133620B DYNAMIC Symb ol P OUT IMD 3 G PS ηD f = 945 MHz V DD = 28 V V DD = 28 V V DD = 28 V Parameter V DD = 28V P out = 45 W PEP P out = 45 W PEP P out = 45 W PEP I DQ = 250 mA I DQ = 250 mA IDQ = 250 mA IDQ = ...


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