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SP8K1

ETC
Part Number SP8K1
Manufacturer ETC
Description Switching (30V / 5.0A)
Published Jun 7, 2005
Detailed Description SP8K1 Transistors Switching (30V, 5.0A) SP8K1 zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Smal...
Datasheet PDF File SP8K1 PDF File

SP8K1
SP8K1

Overview
SP8K1 Transistors Switching (30V, 5.
0A) SP8K1 zFeatures 1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (SOP8).
zApplication Power switching, DC / DC converter.
zExternal dimensions (Unit : mm) SOP8 5.
0±0.
2 (5) (8) 6.
0±0.
3 3.
9±0.
15 zStructure Silicon N-channel MOS FET 1.
5±0.
1 0.
15 1.
27 0.
4±0.
1 0.
1 Each lead has same dimensions zAbsolute maximum ratings (Ta=25°C) It is the same ratings for the Tr.
1 and Tr.
2.
Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Storage temperature ∗1 Pw 10µs, Duty cycle 1% ∗2 MOUNTED ON A CERAMIC BOARD.
zEquivalent circuit (8) (7) (6) (5) (8) (7) (6) (5) Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP IS ISP PD Tch Tstg Limits 30 20 ±5.
0 ±20 1.
6 6.
4 2 150 −55 to +150 Unit V V A A A A W °C °C Max.
1.
75 ∗1 ∗1 ∗2 ∗2 ∗2 0.
5±0.
1 (1) (4) 0.
2±0.
1 (1) (2) (3) (4) (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain ∗1 ∗1 (1) (2) (3) (4) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE ∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use.
Use the protection circuit when the fixed voltages are exceeded.
zThermal resistance (Ta=25°C) Parameter Channel to ambient ∗MOUNTED ON A CERAMIC BOARD.
Symbol Rth (ch-a) Limits 62.
5 Unit °C / W ∗ 1/3 SP8K1 Transistors zElectrical characteristics (Ta=25°C) It is the same characteristics for the Tr.
1 and Tr.
2.
Parameter Symbol IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain ...


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