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SPB07N60S5

Infineon Technologies
Part Number SPB07N60S5
Manufacturer Infineon Technologies
Description Cool MOS Power Transistor
Published Jun 7, 2005
Detailed Description Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalan...
Datasheet PDF File SPB07N60S5 PDF File

SPB07N60S5
SPB07N60S5

Overview
Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance SPB07N60S5 VDS RDS(on) ID 600 V 0.
6 Ω 7.
3 A PG-TO263 Type SPB07N60S5 Package PG-TO263 Ordering Code Q67040-S4185 Marking 07N60S5 Maximum Ratings Parameter Symbol Continuous drain current ID TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax ID puls Avalanche energy, single pulse ID = - A, VDD = 50 V EAS Avalanche energy, repetitive tAR limited by Tjmax1) EAR ID = 7.
3 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax IAR Gate source ...


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