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SPB17N80C3

Infineon Technologies
Part Number SPB17N80C3
Manufacturer Infineon Technologies
Description Cool MOS Power Transistor
Published Jun 7, 2005
Detailed Description CoolMOS® Power Transistor Features • new revolutionary high voltage technology • Extreme dv/dt rated • High peak current...
Datasheet PDF File SPB17N80C3 PDF File

SPB17N80C3
SPB17N80C3

Overview
CoolMOS® Power Transistor Features • new revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low effective capacitances Product Summary V DS R DS(on)max @ Tj = 25°C Q g,typ SPB17N80C3 800 V 0.
29 Ω 91 nC PG-TO263 CoolMOSTM 800V designed for: • Industrial application with high DC bulk voltage • Switching Application (i.
e.
active clamp forward) Type SPB17N80C3 Package PG-TO263 Marking 17N80C3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t 2),3) AR Avalanche current, repetitive t 2),3) AR MOSFET dv /dt ruggedness Gate source voltage ID I D,pulse E AS E AR I AR dv /dt V GS T C=25 °C T C=100 °C T C=25 °C I D=3.
4 A, V DD=50 V I D=17 A, V DD=50 V V DS=0…640...


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