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SPB21N50C3

Infineon Technologies
Part Number SPB21N50C3
Manufacturer Infineon Technologies
Description Power Transistor
Published Jun 7, 2005
Detailed Description Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalan...
Datasheet PDF File SPB21N50C3 PDF File

SPB21N50C3
SPB21N50C3

Overview
Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance SPB16N50C3 VDS @ Tjmax 560 V RDS(on) 0.
28 Ω ID 16 A PG-TO263 Type SPB16N50C3 Package PG-TO263 Ordering Code Q67040-S4642 Marking 16N50C3 Maximum Ratings Parameter Symbol Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=8, VDD=50V Avalanche energy, repetitive tAR limited by Tjmax2) ID=16A, VDD=50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage Gate source voltage AC (f >...


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