DatasheetsPDF.com

SPB42N03S2L-13

Infineon Technologies
Part Number SPB42N03S2L-13
Manufacturer Infineon Technologies
Description OptiMOS Power-Transistor
Published Jun 7, 2005
Detailed Description SPI42N03S2L-13 SPP42N03S2L-13 SPB42N03S2L-13 OptiMOS® Power-Transistor Features • N-channel • Enhancement mode • Logic ...
Datasheet PDF File SPB42N03S2L-13 PDF File

SPB42N03S2L-13
SPB42N03S2L-13

Overview
SPI42N03S2L-13 SPP42N03S2L-13 SPB42N03S2L-13 OptiMOS® Power-Transistor Features • N-channel • Enhancement mode • Logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Avalanche rated • dv /dt rated P-TO262-3-1 Product Summary V DS R DS(on),max ID 30 12.
9 42 V mΩ A P-TO263-3-2 P-TO220-3-1 Type SPP42N03S2L-13 SPB42N03S2L-13 SPI42N03S2L-13 Package P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 Ordering Code Q67042-S4034 Q67042-S4035 Q67042-S4104 Marking 2N03L13 2N03L13 2N03L13 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current Avalanche energy, single pulse Repetitive avalanche energy Reverse diode dv /dt Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS E AR dv /dt V GS P tot T j, T stg T C=25 °C T C=25 °C I D=42 A, R GS=25 Ω limited by T jmax ...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)