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SPB73N03S2L-08

Infineon Technologies
Part Number SPB73N03S2L-08
Manufacturer Infineon Technologies
Description OptiMOS Power-Transistor
Published Jun 7, 2005
Detailed Description SPI73N03S2L-08 SPP73N03S2L-08,SPB73N03S2L-08 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS R DS(on...
Datasheet PDF File SPB73N03S2L-08 PDF File

SPB73N03S2L-08
SPB73N03S2L-08

Overview
SPI73N03S2L-08 SPP73N03S2L-08,SPB73N03S2L-08 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS R DS(on) ID P- TO262 -3-1 P- TO263 -3-2 30 8.
4 73 P- TO220 -3-1 V mΩ A • Enhancement mode • Logic Level • Excellent Gate Charge x R DS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated Type SPP73N03S2L-08 SPB73N03S2L-08 SPI73N03S2L-08 Package P- TO220 -3-1 P- TO263 -3-2 P- TO262 -3-1 Ordering Code Q67042-S4037 Q67042-S4036 Q67042-S4081 Marking 2N03L08 2N03L08 2N03L08 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current1) TC=25°C, 1) Value 73 62 320 170 10 6 ±20 107 -55.
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+175 55/175/56 Unit A ID Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg Avalanche energy, single pulse ID=73A, V DD=25V, RGS=25Ω mJ Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt IS=73A, V DS=24, di/dt=200A/µs, T jmax=175°C kV/µs V W °C ...


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