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SPD100N03S2L-04

Infineon Technologies
Part Number SPD100N03S2L-04
Manufacturer Infineon Technologies
Description OptiMOS Power-Transistor
Published Jun 7, 2005
Detailed Description SPD100N03S2L-04 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS R DS(on) ID 30 4.2 100 P-TO252-5-1 V...
Datasheet PDF File SPD100N03S2L-04 PDF File

SPD100N03S2L-04
SPD100N03S2L-04

Overview
SPD100N03S2L-04 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS R DS(on) ID 30 4.
2 100 P-TO252-5-1 V mΩ A • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated Titel: C:\ARJ\VPT0916 Erstellt von: 1) Drain pin 3,6 Type Package SPD100N03S2L-04 P-TO252-5-1 Ordering Code Q67042-S4128 Marking PN03L04 Gate pin 1 n.
c.
: pin 2 Source pin 4,5 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current2) TC=100°C Symbol ID Value 100 100 Unit A Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg 400 325 15 6 ±20 150 -55.
.
.
+175 55/175/56 kV/µs V W °C mJ Avalanche energy, single pulse ID=80A, V DD=25V, RGS=25Ω Repetitive avalanche energy, limited by Tjmax 3) Reverse diode d v/dt IS=100A, VDS=24V, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-05-09 SPD100N03S2L-04 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case SMD version, device on PCB: @ min.
footprint @ 6 cm2 cooling area 4) Symbol min.
RthJC RthJA - Values typ.
0.
7 max.
1 75 50 Unit K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0V, ID=1mA Symbol min.
V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) 30 1.
2 Values typ.
1.
6 max.
2 Unit V Gate threshold voltage, VGS = V DS ID = 100 µA Zero gate voltage drain current V DS=30V, VGS=0V, Tj=25°C V DS=30V, VGS=0V, Tj=125°C µA 0.
01 10 1 5 3.
4 1 100 100 6.
3 4.
2 nA mΩ Gate-source leakage current V GS=20V, VDS=0V Drain-source on-state resistance V GS=4.
5V, I D=50A Drain-source on-state resistance V GS=10V, I D=50A 1pin 1 and 2 have to be connected together on the PCB as well as pin 4 and 5.
2Current limited by bondwire ; with an...


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