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SPD10N10

Part Number	SPD10N10
Manufacturer	Infineon Technologies
Description	SIPMOS Power Transistor
Published	Jun 7, 2005
Detailed Description	Preliminary Data SIPMOS® Power Transistor Features • N channel • SPD 10N10 Product Summary Drain source voltage Drain...
Datasheet	SPD10N10 PDF File

Overview

Preliminary Data SIPMOS® Power Transistor Features • N channel • SPD 10N10 Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS RDS(on) ID 100 0.
2 10 V Ω A Enhancement mode • Avalanche rated • dv/dt rated Type SPD10N10 SPU10N10 Package P-TO252 P-TO251 Ordering Code Packaging Pin 1 G Pin 2 Pin 3 D S Q67040-S4119-A2 Tape and Reel Q67040-S4111-A2 Tube Maximum Ratings, at Tj = 25 ˚C, unless otherwise specified Parameter Continuous drain current Symbol Value 10 6.
3 40 59 4 6 ±20 40 -55.
.
.
+175 55/150/56 kV/µs V W ˚C mJ Unit A ID TC = 25 ˚C TC = 100 ˚C Pulsed drain current IDpulse EAS EAR dv/dt TC = 25 ˚C Avalanche energy, single pulse ID = 10 A, VDD = 25 V, RGS = 25 Ω Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt IS = 10 A, VDS = 0 V, di/dt = 200 A/µs Gate source voltage Power dissipation VGS Ptot T j , Tstg TC = 25 ˚C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Data Sheet 1 05.
99 SPD 10N10 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leded SMD version, device on PCB: @ min.
footprint @ 6 cm 2 cooling area1) Symbol min.
Values typ.
max.
3.
1 100 75 50 K/W Unit RthJC RthJA RthJA - Electrical Characteristics , at Tj = 25 ˚C, unless otherwise specified Parameter Static Characteristics Drain- source breakdown voltage Symbol min.
Values typ.
3 max.
4 µA 0.
1 10 1 100 100 nA Ω 0.
15 0.
2 V Unit V(BR)DSS VGS(th) I DSS 100 2.
1 VGS = 0 V, ID = 0.
25 mA Gate threshold voltage, VGS = VDS ID = 1 mA Zero gate voltage drain current VDS = 100 V, VGS = 0 V, Tj = 25 ˚C VDS = 100 V, VGS = 0 V, Tj = 125 ˚C Gate-source leakage current I GSS RDS(on) VGS = 20 V, VDS = 0 V Drain-Source on-state resistance VGS = 10 V, ID = 6 A 1 Device on 40mm*40mm*1.
5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection.
PCB is vertical without blown air.
Data Sheet 2 05.
99 ...

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SPD10N10 SIPMOS Power Transistor - Infineon Technologies

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