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SPD11N10

Infineon Technologies
Part Number SPD11N10
Manufacturer Infineon Technologies
Description SIPMOS Power-Transistor
Published Jun 7, 2005
Detailed Description Preliminary data SPD11N10 SPU11N10 Product Summary VDS RDS(on) ID 100 170 10.5 P-TO252 SIPMOS Power-Transistor Featur...
Datasheet PDF File SPD11N10 PDF File

SPD11N10
SPD11N10

Overview
Preliminary data SPD11N10 SPU11N10 Product Summary VDS RDS(on) ID 100 170 10.
5 P-TO252 SIPMOS Power-Transistor Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated V A m P-TO251 Type SPD11N10 SPU11N10 Package P-TO252 P-TO251 Ordering Code Q67042-S4121 Q67042-S4122 Marking 11N10 11N10 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TC=25°C TC=100°C Symbol ID Value 10.
5 7.
8 Unit A Pulsed drain current TC=25°C ID puls EAS dv/dt VGS Ptot Tj , Tstg 41.
2 60 6 ±20 50 -55.
.
.
+175 55/175/56 mJ kV/µs V W °C Avalanche energy, single pulse ID =10.
5 A , VDD =25V, RGS =25 Reverse diode dv/dt ...


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