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SPD30N06S2-23

Infineon Technologies
Part Number SPD30N06S2-23
Manufacturer Infineon Technologies
Description OptiMOS Power-Transistor
Published Jun 7, 2005
Detailed Description SPD30N06S2-23 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS R DS(on) ID 55 23 30 P- TO252 -3-11 V ...
Datasheet PDF File SPD30N06S2-23 PDF File

SPD30N06S2-23
SPD30N06S2-23

Overview
SPD30N06S2-23 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS R DS(on) ID 55 23 30 P- TO252 -3-11 V mΩ A • Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated Type SPD30N06S2-23 Package Ordering Code P- TO252 -3-11 Q67060-S7420 Marking 2N0623 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TC = 25 °C, 1) Symbol ID Value 30 30 Unit A Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg 120 150 10 6 ±20 100 -55.
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+175 55/175/56 kV/µs V W °C mJ Avalanche energy, single pulse ID=30 A , V DD=25V, RGS=25Ω Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt ...


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