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SPD30N08S2L-21

Part Number	SPD30N08S2L-21
Manufacturer	Infineon Technologies
Description	OptiMOS Power-Transistor
Published	Jun 7, 2005
Detailed Description	SPD30N08S2L-21 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS R DS(on) ID 75 20.5 30 P- TO252 -3-11 ...
Datasheet	SPD30N08S2L-21 PDF File

Overview

SPD30N08S2L-21 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS R DS(on) ID 75 20.
5 30 P- TO252 -3-11 V mΩ A • Enhancement mode • Logic Level • 175°C operating temperature • Avalanche rated • dv/dt rated Type SPD30N08S2L-21 Package Ordering Code P- TO252 -3-11 Q67060-S7414 Marking 2N08L21 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current1) TC=25°C Symbol ID Value 30 30 Unit A Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg 120 240 14 6 ±20 136 -55.
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+175 55/175/56 kV/µs V W °C mJ Avalanche energy, single pulse ID=30 A , V DD=25V, RGS=25Ω Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt IS=30A, VDS=60V, di/dt=200A/µs, T jmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-05-09 SPD30N08S2L-21 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case T...

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SPD30N08S2L-21 OptiMOS Power-Transistor - Infineon Technologies

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