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SPI100N03S2L-03

Infineon Technologies
Part Number SPI100N03S2L-03
Manufacturer Infineon Technologies
Description OptiMOS Power-Transistor
Published Jun 7, 2005
Detailed Description SPI100N03S2L-03 SPP100N03S2L-03,SPB100N03S2L-03 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS RDS(...
Datasheet PDF File SPI100N03S2L-03 PDF File

SPI100N03S2L-03
SPI100N03S2L-03

Overview
SPI100N03S2L-03 SPP100N03S2L-03,SPB100N03S2L-03 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS RDS(on) max.
SMD version ID P- TO262 -3-1 P- TO263 -3-2 30 2.
7 100 P- TO220 -3-1 V mΩ A • Enhancement mode • Logic Level • Excellent Gate Charge x R DS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated Type Package SPP100N03S2L-03 P- TO220 -3-1 SPB100N03S2L-03 P- TO263 -3-2 SPI100N03S2L-03 P- TO262 -3-1 Ordering Code Q67042-S4056 Q67042-S4055 Q67042-S4094 Marking PN03L03 PN03L03 PN03L03 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1) TC=25°C Value 100 100 400 810 30 6 ±20 300 -55.
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+175 55/175/56 Unit A ID Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg Avalanche energy, single pulse ID=80 , VDD=25V, RGS=25Ω mJ Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt IS=100A, VDS=24V, di/dt=200A/µs, Tjmax=...


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