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IRFP90N20D

IRF
Part Number IRFP90N20D
Manufacturer IRF
Description Power MOSFET
Published Jun 9, 2005
Detailed Description PD - 94301A SMPS MOSFET IRFP90N20D HEXFET® Power MOSFET l Applications High frequency DC-DC converters VDSS 200V R...
Datasheet PDF File IRFP90N20D PDF File

IRFP90N20D
IRFP90N20D

Overview
PD - 94301A SMPS MOSFET IRFP90N20D HEXFET® Power MOSFET l Applications High frequency DC-DC converters VDSS 200V RDS(on) max 0.
023Ω ID 94Ao Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App.
Note AN1001) l Fully Characterized Avalanche Voltage and Current l TO-247AC Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw Max.
94o 66 380 580 3.
8 ± 30 6.
7 -55 to + 175 300 (1.
6mm from case ) 10 lbf•in (1.
1N•m) Units A W W/°C V V/ns °C Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ.
––– 0.
24 ––– Max.
0.
26 ––– 40 Units °C/W Notes  through o are on page 8 www.
irf.
com 1 09/27/01 IRFP90N20D Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min.
Typ.
Max.
Units Conditions 200 ––– ––– V VGS = 0V, ID = 250µA ––– 0.
24 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.
023 Ω VGS = 10V, ID = 56A „ 3.
0 ––– 5.
0 V VDS = V GS, ID = 250µA ––– ––– 25 VDS = 200V, VGS = 0V µA ––– ––– 250 VDS = 160V, VGS = 0V, TJ = 150°C ––– ––– 100 VGS = 30V nA ––– ––– -100 VGS = -30V Dynamic @ TJ = 25°C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff.
Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("M...


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