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IRFP9140N

IRF
Part Number IRFP9140N
Manufacturer IRF
Description Power MOSFET
Published Jun 9, 2005
Detailed Description PD - 9.1492A PRELIMINARY l l l l l l IRFP9140N HEXFET® Power MOSFET D Advanced Process Technology Dynamic dv/dt Ratin...
Datasheet PDF File IRFP9140N PDF File

IRFP9140N
IRFP9140N


Overview
PD - 9.
1492A PRELIMINARY l l l l l l IRFP9140N HEXFET® Power MOSFET D Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature P-Channel Fast Switching Fully Avalanche Rated VDSS = -100V RDS(on) = 0.
117Ω G S ID = -23A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercialindustrial applications where higher power levels preclude the use of TO-220 devices.
The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.
TO-247AC Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current … Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚… Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ… Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw Max.
-23 -16 -76 140 0.
91 ± 20 430 -11 14 -5.
0 -55 to + 175 300 (1.
6mm from case ) 10 lbf•in (1.
1N•m) Units A W W/°C V mJ A mJ V/ns °C Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ.
––– 0.
24 ––– Max.
1.
1 ––– 40 Units °C/W 3/16/98 IRFP9140N Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Sour...


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