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IXSN35N120AU1

IXYS
Part Number IXSN35N120AU1
Manufacturer IXYS
Description High Voltage 1 GBT with Diode
Published Jun 12, 2005
Detailed Description High Voltage IGBT with Diode IXSN 35N120AU1 VCES IC25 VCE(sat) 3 2 = 1200 V = 70 A = 4V 4 1 Symbol VCES VCGR VGES V...
Datasheet PDF File IXSN35N120AU1 PDF File

IXSN35N120AU1
IXSN35N120AU1

Overview
High Voltage IGBT with Diode IXSN 35N120AU1 VCES IC25 VCE(sat) 3 2 = 1200 V = 70 A = 4V 4 1 Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC PD VISOL TJ TJM Tstg Md Weight Symbol Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 22 W Clamped inductive load, L = 30 mH VGE = 15 V, VCE = 0.
6 • VCES, TJ = 125°C RG = 22 W, non repetitive TC = 25°C 50/60 Hz IISOL £ 1 mA IGBT Diode t = 1 min t=1s Maximum Ratings 1200 1200 ±20 ±30 70 35 140 ICM = 70 @ 0.
8 VCES 10 300 175 2500 3000 -55 .
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+150 150 -55 .
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+150 V A V V A A A A ms W W V~ V~ °C °C °C miniBLOC, SOT-227 B 1 2...


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