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2SA1265


Part Number 2SA1265
Manufacturer Toshiba
Title Silicon PNP Transistor
Description : A SILICON PIMP TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS. FEATURES . Complementary to 2SC3182 . Recommend for 70W High Fidelity Audio...
Features . Complementary to 2SC3182 . Recommend for 70W High Fidelity Audio Frequency Amplifier Output Stage Unit in mm 15.9MAX. 03.2x0:2 % eS MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Diss...

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2SA1261 : ·With ITO-220 package ·High switching speed ·Low collector saturation voltage ·Complement to type 2SC3157 APPLICATIONS ·For high voltage ,high speed and power switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Fig.1 simplified outline (ITO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Ta=25 PT Total power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 60 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -100 -100 -7 -10 -20 -3.5 1.5 W UNIT V V V A A A SavantIC Se.

2SA1261 : ·Low Collector Saturation Voltage- : VCE(sat)= -0.6V(Max.)@IC= -5A ·Fast Switching Speed ·Complement to Type 2SC3157 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Developed for high-voltage high-speed switching, and is ideal for use as a driver in devices such as switching reglators, DC/DC converters, and high frequency power amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dis.

2SA1261-Z : ·High switching speed ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= -0.6V(Max)@ IC= -5A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·Complementary to 2SC3157 APPLICATIONS ·High speed high voltage switching industrial use ·DC/DC converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak -20 A IB Base Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -3.5 A 20 W 150 ℃ Tstg Stor.

2SA1262 : 2SA1262 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3179) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SA1262 –60 –60 –6 –4 –1 30(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Audio and General Purpose (Ta=25°C) 2SA1262 –100max –100max –60min 40min –0.6max 15typ 90typ V MHz pF 12.0min 4.0max sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=–60V VEB=–6V IC=–25mA VCE=–4V, IC=–1A IC=–2A, IB=–0.2A VCE=–12V, IE=0.2A VCB=–10V, f=1MHz External Dimensions MT-25(TO220) 3.0±0.2 10.2±0.2 4.8±0.2 2.0±0.1 Unit µA µA 16.0±0.7 V 8.8±0.2 a b ø3.75±0.2 1.35 0.65 +0.2 -0.1 2.5 B C E 2.5 1.4 sT.

2SA1262 : ·With TO-220 package ·Complement to type 2SC3179 APPLICATIONS ·Audio and general purpose PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -60 -60 -6 -4 -1 30 150 -55~150 UNIT V V V A A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unl.

2SA1262 : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min.) ·Low Collector Saturation Voltage : VCE(sat)= -0.6V(Max.)@IC= -2A ·Complement to Type 2SC3179 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -4 A IB Base Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -1 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:www.iscsem.

2SA1263 : ·Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Min) @IC= -5A ·Good Linearity of hFE ·Complement to Type 2SC3180 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 40W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -6 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.6 A 60 W 150 ℃ Tstg Storage Temperature R.

2SA1263 : : 3 SILICON PNP TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS. FEATURES . Complementary to 2SC3180 . Recommend for 40W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL VCBO VcEO v EBO ic IB ?C Ti T sta RATING -80 -80 -5 -6 -0.6 60 UNIT V V V A A W 150 °C -55-150 °c Unit in mm 3.2±o.2 15L9MAX.,, ^ mz 3 T n d -H 2.0 ±0. + 0.3 1.0-a2 5 \m 5u45±0.2, cSci +1 5.45±0.2 X s a 00 -ft .1 f 5--:i 1. BASE 2. COLLECTOR (HEAT SINK) a EM.

2SA1263N : ·With TO-3P(I) package ·Complement to type 2SC3180N ·2SA1263 with short pin APPLICATIONS ·Power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-3P(I)) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -80 -80 -5 -6 -0.6 60 150 -55~150 UNIT V V V A A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transi.

2SA1263N : ·Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Min) @IC= -5A ·Good Linearity of hFE ·Complement to Type 2SC3180N ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 40W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -6 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.6 A 60 W 150 ℃ Tstg Storage Temperature .

2SA1264 : ·Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Min) @IC= -6A ·Good Linearity of hFE ·Complement to Type 2SC3181 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 55W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.8 A 80 W 150 ℃ Tstg Storage Temperature.

2SA1264 : : . SILICON PNP TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS. FEATURES . Complementary to 2SC3181 . Recommend for 55W High Fidelity Audio Frequency Amplifier Output Stage. Unit in mm 03.2±O.2 15.9MAX. MAXIMUM RATINGS (Ta=25 c) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL Vf.RO VcEO v EBO ic IB pC Tj T stg RATING -120 -120 -5 -8 -0.8 UNIT V V V A A 80 W 150 °C -55 -150 °c 5.45 ±0.2 5.45 ±0.2 C3c3 +1 X s 03 00 C) t l --'( «-^ ,"T I | 1. BASE 2. COLLECTOR (HEAT SINK ) 3. EMITTER TOSHIBA 2-16B1A Weigh.

2SA1264N : ·With TO-3P(I) package ·Complement to type 2SC3181N ·2SA1264 with short pin APPLICATIONS ·Power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-3P(I)) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -120 -120 -5 -8 -0.8 80 150 -55~150 UNIT V V V A A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Trans.

2SA1264N : ·Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Min) @IC= -6A ·Good Linearity of hFE ·Complement to Type 2SC3181N ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 55W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.8 A 80 W 150 ℃ Tstg Storage Temperatur.

2SA1265 : ·Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Min) @IC= -7A ·Good Linearity of hFE ·Complement to Type 2SC3182 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 70W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1 A 100 W 150 ℃ Tstg Storage Temperature.

2SA1265N : ·With TO-3P(I) package ·Complement to type 2SC3182 ·2SA1265 with short pin APPLICATIONS ·Power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-3P(I)) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -140 -140 -5 -10 -1 100 150 -55~150 UNIT V V V A A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transi.




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