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STP55NE06L

ST Microelectronics
Part Number STP55NE06L
Manufacturer ST Microelectronics
Description N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
Published Jun 24, 2005
Detailed Description STP55NE06L STP55NE06LFP N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE™ ” POWER MOSFET TYPE STP55NE06L STP55NE06LF P...
Datasheet PDF File STP55NE06L PDF File

STP55NE06L
STP55NE06L

Overview
STP55NE06L STP55NE06LFP N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE™ ” POWER MOSFET TYPE STP55NE06L STP55NE06LF P s s s s s s V DSS 60 V 60 V R DS(on) < 0.
022 Ω < 0.
022 Ω ID 55 A 28 A TYPICAL RDS(on) = 0.
018 Ω EXCEPTIONAL dV/dt CAPABILTY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC HIGH dV/dt CAPABILITY APPLICATION ORIENTED CHARACTERIZATION 1 2 3 1 2 3 DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” process whereby a single body is implanted on a strip layout structure.
The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
APPLICATIONS s DC MOTOR CONTROL s DC-DC & DC-AC CONVERTERS s SYNCHRONOUS RECTIFICATION ABSOLUTE MAXIMUM RATINGS Symbol Parameter TO-220 TO220FP INTERNAL SCHEMATIC DIAGRAM Valu e STP55NE06L ST P55NE06LFP 60 60 ± 15 o Unit V DS V DGR V GS ID ID IDM...


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