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SI4558DY

Vishay
Part Number SI4558DY
Manufacturer Vishay
Description N- and P-Channel 30-V (D-S) MOSFET
Published Jun 27, 2005
Detailed Description Si4558DY Vishay Siliconix N- and P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 30 rDS(on) (W) 0.040 @ ...
Datasheet PDF File SI4558DY PDF File

SI4558DY
SI4558DY

Overview
Si4558DY Vishay Siliconix N- and P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 30 rDS(on) (W) 0.
040 @ VGS = 10 V 0.
060 @ VGS = 4.
5 V ID (A) "6 "4.
8 "6 "4.
4 P-Channel –30 0.
040 @ VGS = –10 V 0.
070 @ VGS = –4.
5 V S2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View 8 7 6 5 D D D D G2 D G1 S1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg N-Channel 30 "20 "6 "4.
7 "30 2 2.
4 P-Channel –30 "20 "6 "4.
7 "30 –2 Unit V A W 1.
5 –55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a.
Surface Mounted on FR4 Board, t v 10 sec.
Document Number: 70633 S-56944—Rev.
E, 23-Nov-98 www.
vishay.
com S FaxBack 408-970-5600 Symbol RthJA N- or P- Channel 52 Unit _C/W 2-1 Si4558DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage VGS(th) IGSS VDS = VGS, ID = 250 mA VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V Z Zero Gate G Voltage V l Drain D i Current C IDSS VDS = –30 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 70_C VDS = –24 V, VGS = 0 V, TJ = 70_C VDS = 5 V, VGS = 10 V b O S On-State Drain D i Current C Symbol Test Condition Min Typa Max Unit N-Ch P-Ch 1.
0 –1.
0 "100 V nA N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 30 –30 8.
0 –8.
0 0.
032 0.
032 0.
045 0.
056 13 10.
6 0.
77 0.
77 1 –1 5 –5 mA ID(on) VDS = –5 V, VGS = –10 V VDS = 5 V, VGS = 4.
5 V VDS = –5 V, VGS = –4.
5 V VGS = 10 V, ID = 6 A A 0.
040 0.
040 0.
060 0.
070 S 1.
2 –1.
2 W b D i S Drain-Source On-State O S Resistance R i VGS = –10 V, ID = –6 A rDS(on) VGS = 4.
5 V, ID = 4.
8 A VGS = –4.
5 V, ID = –4.
4 A Forward Transconducta...


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