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IRL5602S

IRF
Part Number IRL5602S
Manufacturer IRF
Description HEXFET Power MOSFET
Published Jul 6, 2005
Detailed Description PD- 91888 IRL5602S HEXFET® Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating T...
Datasheet PDF File IRL5602S PDF File

IRL5602S
IRL5602S

Overview
PD- 91888 IRL5602S HEXFET® Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature P-Channel Fast Switching Fully Avalanche Rated D VDSS = -20V G S RDS(on) = 0.
042W ID = -24A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.
It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package.
The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.
0W in a typical surface mount application.
D 2 Pak Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -4.
5V Continuous Drain Current, VGS @ -4.
5V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max.
-24 -17 -96 75 0.
5 ± 8.
0 290 -12 7.
5 -0.
81 -55 to + 175 300 (1.
6mm from case ) Units A W W/°C V mJ A mJ V/ns °C Thermal Resistance Parameter RqJC RqJA Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)** Typ.
––– ––– Max.
2.
0 40 Units °C/W www.
irf.
com 1 5/11/99 IRL5602S Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS DV(BR)DSS/DTJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resistance G...


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